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Tuning optical and ferromagnetic properties of thin GdN films by nitrogen-vacancy centers

Author

Listed:
  • Reddithota Vidyasagar
  • Shinya Kitayama
  • Hiroaki Yoshitomi
  • Takashi Kita
  • Takahiro Sakurai
  • Hitoshi Ohta

Abstract

AlN/GdN/AlN double heterostructures were grown on c-sapphire substrates using a reactive rf sputtering method under high vacuum conditions. The optical absorption spectrum of the GdN shows a clear fundamental band edge of GdN around 800 nm; this transition is attributed to the minority spin band energy of GdN at the X point. Nitrogen vacancy centers cause a blue-shift of the optical band edge of GdN, which could be ascribed to both the band filling, and the electron-hole interactions resulting from the free carriers generated by nitrogen vacancies. Temperature-dependent magnetization measurements demonstrate a clear change in the magnetization values of GdN with respect to the N 2 partial pressure. Nitrogen vacancy centers in the thin GdN film raise the Curie temperature from 31 K to 39 K, which has been accurately measured by the Arrott plots. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2013

Suggested Citation

  • Reddithota Vidyasagar & Shinya Kitayama & Hiroaki Yoshitomi & Takashi Kita & Takahiro Sakurai & Hitoshi Ohta, 2013. "Tuning optical and ferromagnetic properties of thin GdN films by nitrogen-vacancy centers," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 86(2), pages 1-4, February.
    • Handle: RePEc:spr:eurphb:v:86:y:2013:i:2:p:1-4:10.1140/epjb/e2012-30566-3
    DOI: 10.1140/epjb/e2012-30566-3
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