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Optical-controlled domain wall resistance in magnetic nanojunctions

Author

Listed:
  • R. Majidi
  • M. M. Tehranchi
  • A. Phirouznia
  • K. Ghafoori Tabrizi

Abstract

Domain walls in ferromagnetic metals are known to be a source of resistance. In the present work resistance of a domain wall in a ferromagnetic nanojunction is investigated using the semiclassical approach. The analysis is based on the Boltzmann transport equation, within the relaxation time approximation. The one-dimensional Néel-type magnetic domain wall is considered and the effect of the electron-photon interaction on the resistance is studied. The results indicate that polarization and wavelength of the photon play a significant role in the magnetoresistance. The resistance of the nanojunction decreases as the wavelength of the photon increases. It is also shown that the domain wall resistance decreases by increasing the Fermi energy. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2010

Suggested Citation

  • R. Majidi & M. M. Tehranchi & A. Phirouznia & K. Ghafoori Tabrizi, 2010. "Optical-controlled domain wall resistance in magnetic nanojunctions," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 76(3), pages 475-480, August.
    • Handle: RePEc:spr:eurphb:v:76:y:2010:i:3:p:475-480
    DOI: 10.1140/epjb/e2010-00232-1
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