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Strong electron–phonon coupling in magic-angle twisted bilayer graphene

Author

Listed:
  • Cheng Chen

    (ShanghaiTech University
    University of Oxford)

  • Kevin P. Nuckolls

    (Princeton University
    Princeton University
    Massachusetts Institute of Technology)

  • Shuhan Ding

    (Emory University)

  • Wangqian Miao

    (University of California, Santa Barbara)

  • Dillon Wong

    (Princeton University
    Princeton University)

  • Myungchul Oh

    (Princeton University
    Princeton University
    Pohang University of Science and Technology (POSTECH))

  • Ryan L. Lee

    (Princeton University
    Princeton University)

  • Shanmei He

    (University of Oxford)

  • Cheng Peng

    (University of Oxford)

  • Ding Pei

    (ShanghaiTech University)

  • Yiwei Li

    (Wuhan University)

  • Chenyue Hao

    (Beijing Normal University)

  • Haoran Yan

    (Emory University)

  • Hanbo Xiao

    (ShanghaiTech University)

  • Han Gao

    (ShanghaiTech University)

  • Qiao Li

    (ShanghaiTech University)

  • Shihao Zhang

    (ShanghaiTech University)

  • Jianpeng Liu

    (ShanghaiTech University)

  • Lin He

    (Beijing Normal University)

  • Kenji Watanabe

    (National Institute for Materials Science)

  • Takashi Taniguchi

    (National Institute for Materials Science)

  • Chris Jozwiak

    (Lawrence Berkeley National Laboratory)

  • Aaron Bostwick

    (Lawrence Berkeley National Laboratory)

  • Eli Rotenberg

    (Lawrence Berkeley National Laboratory)

  • Chu Li

    (Hong Kong University of Science and Technology)

  • Xu Han

    (Hong Kong University of Science and Technology)

  • Ding Pan

    (Hong Kong University of Science and Technology)

  • Zhongkai Liu

    (ShanghaiTech University)

  • Xi Dai

    (Hong Kong University of Science and Technology)

  • Chaoxing Liu

    (The Pennsylvania State University)

  • B. Andrei Bernevig

    (Princeton University
    Donostia International Physics Center
    Basque Foundation for Science)

  • Yao Wang

    (Emory University
    Clemson University)

  • Ali Yazdani

    (Princeton University
    Princeton University)

  • Yulin Chen

    (ShanghaiTech University
    University of Oxford)

Abstract

The unusual properties of superconductivity in magic-angle twisted bilayer graphene (MATBG) have sparked considerable research interest1–13. However, despite the dedication of intensive experimental efforts and the proposal of several possible pairing mechanisms14–24, the origin of its superconductivity remains elusive. Here, by utilizing angle-resolved photoemission spectroscopy with micrometre spatial resolution, we reveal flat-band replicas in superconducting MATBG, where MATBG is unaligned with its hexagonal boron nitride substrate11. These replicas show uniform energy spacing, approximately 150 ± 15 meV apart, indicative of strong electron–boson coupling. Strikingly, these replicas are absent in non-superconducting twisted bilayer graphene (TBG) systems, either when MATBG is aligned to hexagonal boron nitride or when TBG deviates from the magic angle. Calculations suggest that the formation of these flat-band replicas in superconducting MATBG are attributed to the strong coupling between flat-band electrons and an optical phonon mode at the graphene K point, facilitated by intervalley scattering. These findings, although they do not necessarily put electron–phonon coupling as the main driving force for the superconductivity in MATBG, unravel the electronic structure inherent in superconducting MATBG, thereby providing crucial information for understanding the unusual electronic landscape from which its superconductivity is derived.

Suggested Citation

  • Cheng Chen & Kevin P. Nuckolls & Shuhan Ding & Wangqian Miao & Dillon Wong & Myungchul Oh & Ryan L. Lee & Shanmei He & Cheng Peng & Ding Pei & Yiwei Li & Chenyue Hao & Haoran Yan & Hanbo Xiao & Han Ga, 2024. "Strong electron–phonon coupling in magic-angle twisted bilayer graphene," Nature, Nature, vol. 636(8042), pages 342-347, December.
  • Handle: RePEc:nat:nature:v:636:y:2024:i:8042:d:10.1038_s41586-024-08227-w
    DOI: 10.1038/s41586-024-08227-w
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