Author
Listed:
- Baichen Lin
(Agency for Science, Technology and Research (A*STAR)
Nanyang Technological University)
- Khuong Phuong Ong
(Agency for Science, Technology and Research (A*STAR))
- Tiannan Yang
(Shanghai Jiao Tong University)
- Qibin Zeng
(Agency for Science, Technology and Research (A*STAR))
- Hui Kim Hui
(Agency for Science, Technology and Research (A*STAR))
- Zhen Ye
(Agency for Science, Technology and Research (A*STAR)
National University of Singapore)
- Celine Sim
(Agency for Science, Technology and Research (A*STAR)
Nanyang Technological University)
- Zhihao Yen
(Nanyang Technological University)
- Ping Yang
(National University of Singapore)
- Yanxin Dou
(National University of Singapore)
- Xiaolong Li
(Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Chinese Academy of Sciences)
- Xingyu Gao
(Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Chinese Academy of Sciences)
- Chee Kiang Ivan Tan
(Agency for Science, Technology and Research (A*STAR))
- Zhi Shiuh Lim
(Agency for Science, Technology and Research (A*STAR))
- Shengwei Zeng
(Agency for Science, Technology and Research (A*STAR))
- Tiancheng Luo
(Agency for Science, Technology and Research (A*STAR))
- Jinlong Xu
(Agency for Science, Technology and Research (A*STAR)
National University of Singapore)
- Xin Tong
(Agency for Science, Technology and Research (A*STAR)
Wuhan University)
- Patrick Wen Feng Li
(Nanyang Technological University)
- Minqin Ren
(National University of Singapore)
- Kaiyang Zeng
(National University of Singapore)
- Chengliang Sun
(Wuhan University)
- Seeram Ramakrishna
(National University of Singapore)
- Mark B. H. Breese
(National University of Singapore)
- Chris Boothroyd
(Nanyang Technological University
Nanyang Technological University)
- Chengkuo Lee
(National University of Singapore)
- David J. Singh
(University of Missouri)
- Yeng Ming Lam
(Nanyang Technological University
Nanyang Technological University)
- Huajun Liu
(Agency for Science, Technology and Research (A*STAR))
Abstract
Materials with electromechanical coupling are essential for transducers and acoustic devices as reversible converters between mechanical and electrical energy1–6. High electromechanical responses are typically found in materials with strong structural instabilities, conventionally achieved by two strategies—morphotropic phase boundaries7 and nanoscale structural heterogeneity8. Here we demonstrate a different strategy to accomplish ultrahigh electromechanical response by inducing extreme structural instability from competing antiferroelectric and ferroelectric orders. Guided by the phase diagram and theoretical calculations, we designed the coexistence of antiferroelectric orthorhombic and ferroelectric rhombohedral phases in sodium niobate thin films. These films show effective piezoelectric coefficients above 5,000 pm V−1 because of electric-field-induced antiferroelectric–ferroelectric phase transitions. Our results provide a general approach to design and exploit antiferroelectric materials for electromechanical devices.
Suggested Citation
Baichen Lin & Khuong Phuong Ong & Tiannan Yang & Qibin Zeng & Hui Kim Hui & Zhen Ye & Celine Sim & Zhihao Yen & Ping Yang & Yanxin Dou & Xiaolong Li & Xingyu Gao & Chee Kiang Ivan Tan & Zhi Shiuh Lim , 2024.
"Ultrahigh electromechanical response from competing ferroic orders,"
Nature, Nature, vol. 633(8031), pages 798-803, September.
Handle:
RePEc:nat:nature:v:633:y:2024:i:8031:d:10.1038_s41586-024-07917-9
DOI: 10.1038/s41586-024-07917-9
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