On-chip multi-degree-of-freedom control of two-dimensional materials

Two-dimensional materials (2DM) and their heterostructures offer tunable electrical and optical properties, primarily modifiable through electrostatic gating and twisting. Although electrostatic gating is a well-established method for manipulating 2DM, achieving real-time control over interfacial properties remains challenging in exploring 2DM physics and advanced quantum device technology1–6. Current methods, often reliant on scanning microscopes, are limited in their scope of application, lacking the accessibility and scalability of electrostatic gating at the device level. Here we introduce an on-chip platform for 2DM with in situ adjustable interfacial properties, using a microelectromechanical system (MEMS). This platform comprises compact and cost-effective devices with the ability of precise voltage-controlled manipulation of 2DM, including approaching, twisting and pressurizing actions. We demonstrate this technology by creating synthetic topological singularities, such as merons, in the nonlinear optical susceptibility of twisted hexagonal boron nitride (h-BN)7–10. A key application of this technology is the development of integrated light sources with real-time and wide-range tunable polarization. Furthermore, we predict a quantum analogue that can generate entangled photon pairs with adjustable entanglement properties. Our work extends the abilities of existing technologies in manipulating low-dimensional quantum materials and paves the way for new hybrid two- and three-dimensional devices, with promising implications in condensed-matter physics, quantum optics and related fields.