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Van der Waals polarity-engineered 3D integration of 2D complementary logic

Author

Listed:
  • Yimeng Guo

    (Institute of Metal Research, Chinese Academy of Sciences
    University of Science and Technology of China)

  • Jiangxu Li

    (Institute of Metal Research, Chinese Academy of Sciences)

  • Xuepeng Zhan

    (Shandong University)

  • Chunwen Wang

    (University of Chinese Academy of Sciences)

  • Min Li

    (ShanghaiTech University
    ShanghaiTech University)

  • Biao Zhang

    (Shenzhen Campus of Sun Yat-Sen University
    Peking University)

  • Zirui Wang

    (Peking University)

  • Yueyang Liu

    (Chinese Academy of Sciences Beijing)

  • Kaining Yang

    (Shanxi University
    Shanxi University)

  • Hai Wang

    (Shandong University)

  • Wanying Li

    (Institute of Metal Research, Chinese Academy of Sciences)

  • Pingfan Gu

    (Collaborative Innovation Center of Quantum Matter
    Peking University)

  • Zhaoping Luo

    (Institute of Metal Research, Chinese Academy of Sciences)

  • Yingjia Liu

    (Institute of Metal Research, Chinese Academy of Sciences
    University of Science and Technology of China)

  • Peitao Liu

    (Institute of Metal Research, Chinese Academy of Sciences)

  • Bo Chen

    (Shandong University)

  • Kenji Watanabe

    (National Institute for Materials Science)

  • Takashi Taniguchi

    (National Institute for Materials Science)

  • Xing-Qiu Chen

    (Institute of Metal Research, Chinese Academy of Sciences)

  • Chengbing Qin

    (Shanxi University
    Shanxi University)

  • Jiezhi Chen

    (Shandong University)

  • Dongming Sun

    (Institute of Metal Research, Chinese Academy of Sciences)

  • Jing Zhang

    (Shanxi University
    Shanxi University)

  • Runsheng Wang

    (Peking University)

  • Jianpeng Liu

    (ShanghaiTech University
    ShanghaiTech University
    Liaoning Academy of Materials)

  • Yu Ye

    (Collaborative Innovation Center of Quantum Matter
    Peking University
    Liaoning Academy of Materials)

  • Xiuyan Li

    (Institute of Metal Research, Chinese Academy of Sciences
    Liaoning Academy of Materials)

  • Yanglong Hou

    (Shenzhen Campus of Sun Yat-Sen University
    Peking University)

  • Wu Zhou

    (University of Chinese Academy of Sciences)

  • Hanwen Wang

    (Liaoning Academy of Materials)

  • Zheng Han

    (Shanxi University
    Shanxi University
    Liaoning Academy of Materials)

Abstract

Vertical three-dimensional integration of two-dimensional (2D) semiconductors holds great promise, as it offers the possibility to scale up logic layers in the z axis1–3. Indeed, vertical complementary field-effect transistors (CFETs) built with such mixed-dimensional heterostructures4,5, as well as hetero-2D layers with different carrier types6–8, have been demonstrated recently. However, so far, the lack of a controllable doping scheme (especially p-doped WSe2 (refs. 9–17) and MoS2 (refs. 11,18–28)) in 2D semiconductors, preferably in a stable and non-destructive manner, has greatly impeded the bottom-up scaling of complementary logic circuitries. Here we show that, by bringing transition metal dichalcogenides, such as MoS2, atop a van der Waals (vdW) antiferromagnetic insulator chromium oxychloride (CrOCl), the carrier polarity in MoS2 can be readily reconfigured from n- to p-type via strong vdW interfacial coupling. The consequential band alignment yields transistors with room-temperature hole mobilities up to approximately 425 cm2 V−1 s−1, on/off ratios reaching 106 and air-stable performance for over one year. Based on this approach, vertically constructed complementary logic, including inverters with 6 vdW layers, NANDs with 14 vdW layers and SRAMs with 14 vdW layers, are further demonstrated. Our findings of polarity-engineered p- and n-type 2D semiconductor channels with and without vdW intercalation are robust and universal to various materials and thus may throw light on future three-dimensional vertically integrated circuits based on 2D logic gates.

Suggested Citation

  • Yimeng Guo & Jiangxu Li & Xuepeng Zhan & Chunwen Wang & Min Li & Biao Zhang & Zirui Wang & Yueyang Liu & Kaining Yang & Hai Wang & Wanying Li & Pingfan Gu & Zhaoping Luo & Yingjia Liu & Peitao Liu & B, 2024. "Van der Waals polarity-engineered 3D integration of 2D complementary logic," Nature, Nature, vol. 630(8016), pages 346-352, June.
  • Handle: RePEc:nat:nature:v:630:y:2024:i:8016:d:10.1038_s41586-024-07438-5
    DOI: 10.1038/s41586-024-07438-5
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    Cited by:

    1. Weiting Xu & Jiayang Jiang & Yujia Chen & Ning Tang & Chengbao Jiang & Shengxue Yang, 2024. "Single-crystalline High-κ GdOCl dielectric for two-dimensional field-effect transistors," Nature Communications, Nature, vol. 15(1), pages 1-10, December.

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