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High-κ perovskite membranes as insulators for two-dimensional transistors

Author

Listed:
  • Jing-Kai Huang

    (University of New South Wales)

  • Yi Wan

    (The University of Hong Kong)

  • Junjie Shi

    (University of New South Wales)

  • Ji Zhang

    (University of New South Wales)

  • Zeheng Wang

    (University of New South Wales)

  • Wenxuan Wang

    (University of New South Wales)

  • Ni Yang

    (University of New South Wales)

  • Yang Liu

    (University of New South Wales)

  • Chun-Ho Lin

    (University of New South Wales)

  • Xinwei Guan

    (University of New South Wales)

  • Long Hu

    (University of New South Wales)

  • Zi-Liang Yang

    (National Taiwan University
    National Taiwan University)

  • Bo-Chao Huang

    (National Taiwan University)

  • Ya-Ping Chiu

    (National Taiwan University
    National Taiwan University)

  • Jack Yang

    (University of New South Wales)

  • Vincent Tung

    (King Abdullah University of Science and Technology)

  • Danyang Wang

    (University of New South Wales)

  • Kourosh Kalantar-Zadeh

    (University of New South Wales)

  • Tom Wu

    (University of New South Wales)

  • Xiaotao Zu

    (School of Physics, University of Electronic Science and Technology of China)

  • Liang Qiao

    (School of Physics, University of Electronic Science and Technology of China)

  • Lain-Jong Li

    (The University of Hong Kong
    The University of Hong Kong)

  • Sean Li

    (University of New South Wales)

Abstract

The scaling of silicon metal–oxide–semiconductor field-effect transistors has followed Moore’s law for decades, but the physical thinning of silicon at sub-ten-nanometre technology nodes introduces issues such as leakage currents1. Two-dimensional (2D) layered semiconductors, with an atomic thickness that allows superior gate-field penetration, are of interest as channel materials for future transistors2,3. However, the integration of high-dielectric-constant (κ) materials with 2D materials, while scaling their capacitance equivalent thickness (CET), has proved challenging. Here we explore transferrable ultrahigh-κ single-crystalline perovskite strontium-titanium-oxide membranes as a gate dielectric for 2D field-effect transistors. Our perovskite membranes exhibit a desirable sub-one-nanometre CET with a low leakage current (less than 10−2 amperes per square centimetre at 2.5 megavolts per centimetre). We find that the van der Waals gap between strontium-titanium-oxide dielectrics and 2D semiconductors mitigates the unfavourable fringing-induced barrier-lowering effect resulting from the use of ultrahigh-κ dielectrics4. Typical short-channel transistors made of scalable molybdenum-disulfide films by chemical vapour deposition and strontium-titanium-oxide dielectrics exhibit steep subthreshold swings down to about 70 millivolts per decade and on/off current ratios up to 107, which matches the low-power specifications suggested by the latest International Roadmap for Devices and Systems5.

Suggested Citation

  • Jing-Kai Huang & Yi Wan & Junjie Shi & Ji Zhang & Zeheng Wang & Wenxuan Wang & Ni Yang & Yang Liu & Chun-Ho Lin & Xinwei Guan & Long Hu & Zi-Liang Yang & Bo-Chao Huang & Ya-Ping Chiu & Jack Yang & Vin, 2022. "High-κ perovskite membranes as insulators for two-dimensional transistors," Nature, Nature, vol. 605(7909), pages 262-267, May.
  • Handle: RePEc:nat:nature:v:605:y:2022:i:7909:d:10.1038_s41586-022-04588-2
    DOI: 10.1038/s41586-022-04588-2
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    Citations

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    Cited by:

    1. Yu Pan & Tao Jian & Pingfan Gu & Yiwen Song & Qi Wang & Bo Han & Yuqia Ran & Zemin Pan & Yanping Li & Wanjin Xu & Peng Gao & Chendong Zhang & Jun He & Xiaolong Xu & Yu Ye, 2024. "Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    2. Weiting Xu & Jiayang Jiang & Yujia Chen & Ning Tang & Chengbao Jiang & Shengxue Yang, 2024. "Single-crystalline High-κ GdOCl dielectric for two-dimensional field-effect transistors," Nature Communications, Nature, vol. 15(1), pages 1-10, December.
    3. Jiabiao Chen & Zhaochao Liu & Xinyue Dong & Zhansheng Gao & Yuxuan Lin & Yuyu He & Yingnan Duan & Tonghuai Cheng & Zhengyang Zhou & Huixia Fu & Feng Luo & Jinxiong Wu, 2023. "Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric," Nature Communications, Nature, vol. 14(1), pages 1-10, December.

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