Author
Listed:
- Rusen Yan
(School of Electrical and Computer Engineering, Cornell University)
- Guru Khalsa
(Cornell University)
- Suresh Vishwanath
(School of Electrical and Computer Engineering, Cornell University)
- Yimo Han
(School of Applied and Engineering Physics, Cornell University)
- John Wright
(Cornell University)
- Sergei Rouvimov
(University of Notre Dame)
- D. Scott Katzer
(US Naval Research Laboratory)
- Neeraj Nepal
(US Naval Research Laboratory)
- Brian P. Downey
(US Naval Research Laboratory)
- David A. Muller
(School of Applied and Engineering Physics, Cornell University
Kavli Institute for Nanoscale Science, Cornell University)
- Huili G. Xing
(School of Electrical and Computer Engineering, Cornell University
Cornell University
Kavli Institute for Nanoscale Science, Cornell University)
- David J. Meyer
(US Naval Research Laboratory)
- Debdeep Jena
(School of Electrical and Computer Engineering, Cornell University
Cornell University
Kavli Institute for Nanoscale Science, Cornell University)
Abstract
Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.
Suggested Citation
Rusen Yan & Guru Khalsa & Suresh Vishwanath & Yimo Han & John Wright & Sergei Rouvimov & D. Scott Katzer & Neeraj Nepal & Brian P. Downey & David A. Muller & Huili G. Xing & David J. Meyer & Debdeep J, 2018.
"GaN/NbN epitaxial semiconductor/superconductor heterostructures,"
Nature, Nature, vol. 555(7695), pages 183-189, March.
Handle:
RePEc:nat:nature:v:555:y:2018:i:7695:d:10.1038_nature25768
DOI: 10.1038/nature25768
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