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Intrinsic ferroelectric switching from first principles

Author

Listed:
  • Shi Liu

    (Geophysical Laboratory, Carnegie Institution for Science)

  • Ilya Grinberg

    (The Makineni Theoretical Laboratories, University of Pennsylvania
    Bar-Ilan University)

  • Andrew M. Rappe

    (The Makineni Theoretical Laboratories, University of Pennsylvania)

Abstract

Molecular dynamics simulations of 90° domain walls in PbTiO3 are used to construct a nucleation-and-growth-based analytical model that quantifies the dynamics of many types of domain walls in various ferroelectrics, suggesting intrinsic domain-wall motion as a universal mechanism for ferroelectric switching.

Suggested Citation

  • Shi Liu & Ilya Grinberg & Andrew M. Rappe, 2016. "Intrinsic ferroelectric switching from first principles," Nature, Nature, vol. 534(7607), pages 360-363, June.
    • Handle: RePEc:nat:nature:v:534:y:2016:i:7607:d:10.1038_nature18286
    DOI: 10.1038/nature18286
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    Cited by:

    1. Guangdi Feng & Qiuxiang Zhu & Xuefeng Liu & Luqiu Chen & Xiaoming Zhao & Jianquan Liu & Shaobing Xiong & Kexiang Shan & Zhenzhong Yang & Qinye Bao & Fangyu Yue & Hui Peng & Rong Huang & Xiaodong Tang , 2024. "A ferroelectric fin diode for robust non-volatile memory," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    2. Yueyang Jia & Qianqian Yang & Yue-Wen Fang & Yue Lu & Maosong Xie & Jianyong Wei & Jianjun Tian & Linxing Zhang & Rui Yang, 2024. "Giant tunnelling electroresistance in atomic-scale ferroelectric tunnel junctions," Nature Communications, Nature, vol. 15(1), pages 1-9, December.

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