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A subthermionic tunnel field-effect transistor with an atomically thin channel

Author

Listed:
  • Deblina Sarkar

    (University of California)

  • Xuejun Xie

    (University of California)

  • Wei Liu

    (University of California)

  • Wei Cao

    (University of California)

  • Jiahao Kang

    (University of California)

  • Yongji Gong

    (Rice University)

  • Stephan Kraemer

    (University of California)

  • Pulickel M. Ajayan

    (Rice University)

  • Kaustav Banerjee

    (University of California)

Abstract

A new type of device, the band-to-band tunnel transistor, which has atomically thin molybdenum disulfide as the active channel, operates in a fundamentally different way from a conventional silicon (MOSFET) transistor; it has turn-on characteristics and low-power operation that are better than those of state-of-the-art MOSFETs or any tunnelling transistor reported so far.

Suggested Citation

  • Deblina Sarkar & Xuejun Xie & Wei Liu & Wei Cao & Jiahao Kang & Yongji Gong & Stephan Kraemer & Pulickel M. Ajayan & Kaustav Banerjee, 2015. "A subthermionic tunnel field-effect transistor with an atomically thin channel," Nature, Nature, vol. 526(7571), pages 91-95, October.
    • Handle: RePEc:nat:nature:v:526:y:2015:i:7571:d:10.1038_nature15387
    DOI: 10.1038/nature15387
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    Cited by:

    1. Thanh Luan Phan & Sohyeon Seo & Yunhee Cho & Quoc An Vu & Young Hee Lee & Dinh Loc Duong & Hyoyoung Lee & Woo Jong Yu, 2022. "CNT-molecule-CNT (1D-0D-1D) van der Waals integration ferroelectric memory with 1-nm2 junction area," Nature Communications, Nature, vol. 13(1), pages 1-8, December.

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