Author
Listed:
- Karthik V. Raman
(Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology
Massachusetts Institute of Technology
Present address: IBM India Research Laboratory, Bangalore 560045, India (K.V.R.); Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands (A.M.K.).)
- Alexander M. Kamerbeek
(Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology
Present address: IBM India Research Laboratory, Bangalore 560045, India (K.V.R.); Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands (A.M.K.).)
- Arup Mukherjee
(Indian Institute of Science Education and Research (IISER)-Kolkata, Mohanpur 741252, India)
- Nicolae Atodiresei
(Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany)
- Tamal K. Sen
(Indian Institute of Science Education and Research (IISER)-Kolkata, Mohanpur 741252, India)
- Predrag Lazić
(Rudjer Boskovic Institute, PO Box 180, HR-10002 Zagreb, Croatia)
- Vasile Caciuc
(Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany)
- Reent Michel
(Institut für Anorganische Chemie, Universität Göttingen, Göttingen 37077, Germany)
- Dietmar Stalke
(Institut für Anorganische Chemie, Universität Göttingen, Göttingen 37077, Germany)
- Swadhin K. Mandal
(Indian Institute of Science Education and Research (IISER)-Kolkata, Mohanpur 741252, India)
- Stefan Blügel
(Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany)
- Markus Münzenberg
(I. Physikalisches Institut, Georg-August-Universität Göttingen, Göttingen 37077, Germany)
- Jagadeesh S. Moodera
(Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology
Massachusetts Institute of Technology)
Abstract
When molecules of a phenalenyl derivative, which has no net spin, are deposited on a ferromagnet, they develop into a magnetic supramolecular layer with spin-filtering properties; this could be the basis for a new approach to building molecular magnetic devices.
Suggested Citation
Karthik V. Raman & Alexander M. Kamerbeek & Arup Mukherjee & Nicolae Atodiresei & Tamal K. Sen & Predrag Lazić & Vasile Caciuc & Reent Michel & Dietmar Stalke & Swadhin K. Mandal & Stefan Blügel & Mar, 2013.
"Interface-engineered templates for molecular spin memory devices,"
Nature, Nature, vol. 493(7433), pages 509-513, January.
Handle:
RePEc:nat:nature:v:493:y:2013:i:7433:d:10.1038_nature11719
DOI: 10.1038/nature11719
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Cited by:
- Xueli Yang & Ankang Guo & Jie Yang & Jinyang Chen & Ke Meng & Shunhua Hu & Ran Duan & Mingliang Zhu & Wenkang Shi & Yang Qin & Rui Zhang & Haijun Yang & Jikun Li & Lidan Guo & Xiangnan Sun & Yunqi Liu, 2024.
"Halogenated-edge polymeric semiconductor for efficient spin transport,"
Nature Communications, Nature, vol. 15(1), pages 1-11, December.
- Daiji Ogata & Shota Koide & Hiroyuki Kishi & Junpei Yuasa, 2024.
"Direct observation of electron transfer in solids through X-ray crystallography,"
Nature Communications, Nature, vol. 15(1), pages 1-7, December.
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