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Interface-engineered templates for molecular spin memory devices

Author

Listed:
  • Karthik V. Raman

    (Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology
    Massachusetts Institute of Technology
    Present address: IBM India Research Laboratory, Bangalore 560045, India (K.V.R.); Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands (A.M.K.).)

  • Alexander M. Kamerbeek

    (Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology
    Present address: IBM India Research Laboratory, Bangalore 560045, India (K.V.R.); Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands (A.M.K.).)

  • Arup Mukherjee

    (Indian Institute of Science Education and Research (IISER)-Kolkata, Mohanpur 741252, India)

  • Nicolae Atodiresei

    (Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany)

  • Tamal K. Sen

    (Indian Institute of Science Education and Research (IISER)-Kolkata, Mohanpur 741252, India)

  • Predrag Lazić

    (Rudjer Boskovic Institute, PO Box 180, HR-10002 Zagreb, Croatia)

  • Vasile Caciuc

    (Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany)

  • Reent Michel

    (Institut für Anorganische Chemie, Universität Göttingen, Göttingen 37077, Germany)

  • Dietmar Stalke

    (Institut für Anorganische Chemie, Universität Göttingen, Göttingen 37077, Germany)

  • Swadhin K. Mandal

    (Indian Institute of Science Education and Research (IISER)-Kolkata, Mohanpur 741252, India)

  • Stefan Blügel

    (Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany)

  • Markus Münzenberg

    (I. Physikalisches Institut, Georg-August-Universität Göttingen, Göttingen 37077, Germany)

  • Jagadeesh S. Moodera

    (Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology
    Massachusetts Institute of Technology)

Abstract

When molecules of a phenalenyl derivative, which has no net spin, are deposited on a ferromagnet, they develop into a magnetic supramolecular layer with spin-filtering properties; this could be the basis for a new approach to building molecular magnetic devices.

Suggested Citation

  • Karthik V. Raman & Alexander M. Kamerbeek & Arup Mukherjee & Nicolae Atodiresei & Tamal K. Sen & Predrag Lazić & Vasile Caciuc & Reent Michel & Dietmar Stalke & Swadhin K. Mandal & Stefan Blügel & Mar, 2013. "Interface-engineered templates for molecular spin memory devices," Nature, Nature, vol. 493(7433), pages 509-513, January.
    • Handle: RePEc:nat:nature:v:493:y:2013:i:7433:d:10.1038_nature11719
    DOI: 10.1038/nature11719
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    Cited by:

    1. Daiji Ogata & Shota Koide & Hiroyuki Kishi & Junpei Yuasa, 2024. "Direct observation of electron transfer in solids through X-ray crystallography," Nature Communications, Nature, vol. 15(1), pages 1-7, December.

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