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Academic and industry research progress in germanium nanodevices

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  • Ravi Pillarisetty

    (Components Research, Technology and Manufacturing Group, Intel Corporation)

Abstract

Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.

Suggested Citation

  • Ravi Pillarisetty, 2011. "Academic and industry research progress in germanium nanodevices," Nature, Nature, vol. 479(7373), pages 324-328, November.
    • Handle: RePEc:nat:nature:v:479:y:2011:i:7373:d:10.1038_nature10678
    DOI: 10.1038/nature10678
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    Cited by:

    1. W. I. L. Lawrie & M. Rimbach-Russ & F. van Riggelen & N. W. Hendrickx & S. L. de Snoo & A. Sammak & G. Scappucci & J. Helsen & M. Veldhorst, 2023. "Simultaneous single-qubit driving of semiconductor spin qubits at the fault-tolerant threshold," Nature Communications, Nature, vol. 14(1), pages 1-7, December.

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