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GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies

Author

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  • Jongseung Yoon

    (Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA)

  • Sungjin Jo

    (Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
    Hanyang University)

  • Ik Su Chun

    (University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA)

  • Inhwa Jung

    (Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA)

  • Hoon-Sik Kim

    (Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA)

  • Matthew Meitl

    (Semprius, Inc., Durham, North Carolina 27713, USA)

  • Etienne Menard

    (Semprius, Inc., Durham, North Carolina 27713, USA)

  • Xiuling Li

    (University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA)

  • James J. Coleman

    (University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA)

  • Ungyu Paik

    (Hanyang University)

  • John A. Rogers

    (Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
    University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA)

Abstract

Flexible GaAs semiconductors Although compound semiconductors like gallium arsenide have a substantial performance advantage over silicon in photovoltaic and optoelectronic applications, these do not outweigh the costly process of growing large, high-quality layers of these materials and transferring them to flexible or transparent substrates for use in devices such as solar cells, night vision cameras and wireless communication systems. But now John Rogers and his team demonstrate a new fabrication approach that may remove this disadvantage. They grow films of GaAs and AlGaAs in thick, multilayered assemblies in a single deposition sequence, then release the individual layers and distribute them over foreign substrates by printing. The technological potential of this strategy to large-area applications is illustrated with the fabrication of GaAs devices such as field-effect transistors on glass and photovoltaic modules on sheets of plastic.

Suggested Citation

  • Jongseung Yoon & Sungjin Jo & Ik Su Chun & Inhwa Jung & Hoon-Sik Kim & Matthew Meitl & Etienne Menard & Xiuling Li & James J. Coleman & Ungyu Paik & John A. Rogers, 2010. "GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies," Nature, Nature, vol. 465(7296), pages 329-333, May.
  • Handle: RePEc:nat:nature:v:465:y:2010:i:7296:d:10.1038_nature09054
    DOI: 10.1038/nature09054
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    Cited by:

    1. Tadeáš Hanuš & Bouraoui Ilahi & Jinyoun Cho & Kristof Dessein & Abderraouf Boucherif, 2024. "Sustainable Production of Ultrathin Ge Freestanding Membranes," Sustainability, MDPI, vol. 16(4), pages 1-12, February.
    2. Yuchen Qiu & Bo Zhang & Junchuan Yang & Hanfei Gao & Shuang Li & Le Wang & Penghua Wu & Yewang Su & Yan Zhao & Jiangang Feng & Lei Jiang & Yuchen Wu, 2021. "Wafer-scale integration of stretchable semiconducting polymer microstructures via capillary gradient," Nature Communications, Nature, vol. 12(1), pages 1-9, December.
    3. Chee, A. Kuan-Way, 2023. "On current technology for light absorber materials used in highly efficient industrial solar cells," Renewable and Sustainable Energy Reviews, Elsevier, vol. 173(C).

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