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Magnetization vector manipulation by electric fields

Author

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  • D. Chiba

    (Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Sanban-cho 5, Chiyoda-ku, Tokyo 102-0075, Japan
    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan)

  • M. Sawicki

    (Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan
    Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, PL-02668, Warszawa, Poland)

  • Y. Nishitani

    (Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan)

  • Y. Nakatani

    (University of Electro-communications, Chofugaoka 1-5-1, Chofu, Tokyo 182-8585, Japan)

  • F. Matsukura

    (Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Sanban-cho 5, Chiyoda-ku, Tokyo 102-0075, Japan
    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan)

  • H. Ohno

    (Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Sanban-cho 5, Chiyoda-ku, Tokyo 102-0075, Japan
    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan)

Abstract

Playing the field In conventional semiconductor devices, conductivity is controlled by electric fields. To add functionality, which could lead to devices that combine data processing and non-volatile memory, there is significant interest in finding ways of using electrical fields to control magnetization as well. Such control has been achieved indirectly by resorting to magnetostriction, a change in magnetization induced by mechanically generated strain, but this is not suitable for practical applications. Chiba et al. now demonstrate a direct approach; they find that the magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As is dependent on charge carrier density, and that this parameter can be varied using an electric field. By applying a varying electric field it is possible to switch between stable directions of magnetization.

Suggested Citation

  • D. Chiba & M. Sawicki & Y. Nishitani & Y. Nakatani & F. Matsukura & H. Ohno, 2008. "Magnetization vector manipulation by electric fields," Nature, Nature, vol. 455(7212), pages 515-518, September.
    • Handle: RePEc:nat:nature:v:455:y:2008:i:7212:d:10.1038_nature07318
    DOI: 10.1038/nature07318
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    Cited by:

    1. Giorgos Livanas & Nikolaos Vanas & Manfred Sigrist & Georgios Varelogiannis, 2022. "Platform for controllable Majorana zero modes using superconductor/ferromagnet heterostructures," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 95(3), pages 1-7, March.
    2. Takuya Funatsu & Shun Kanai & Jun’ichi Ieda & Shunsuke Fukami & Hideo Ohno, 2022. "Local bifurcation with spin-transfer torque in superparamagnetic tunnel junctions," Nature Communications, Nature, vol. 13(1), pages 1-8, December.

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