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Room-temperature ferroelectricity in strained SrTiO3

Author

Listed:
  • J. H. Haeni

    (Penn State University)

  • P. Irvin

    (University of Pittsburgh)

  • W. Chang

    (Naval Research Laboratory)

  • R. Uecker

    (Institute of Crystal Growth)

  • P. Reiche

    (Institute of Crystal Growth)

  • Y. L. Li

    (Penn State University)

  • S. Choudhury

    (Penn State University)

  • W. Tian

    (University of Michigan)

  • M. E. Hawley

    (Los Alamos National Laboratory)

  • B. Craigo

    (Motorola Labs)

  • A. K. Tagantsev

    (Ecole Polytechnique Fédérale de Lausanne)

  • X. Q. Pan

    (University of Michigan)

  • S. K. Streiffer

    (Argonne National Laboratory)

  • L. Q. Chen

    (Penn State University)

  • S. W. Kirchoefer

    (Naval Research Laboratory)

  • J. Levy

    (University of Pittsburgh)

  • D. G. Schlom

    (Penn State University)

Abstract

Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (Tc) is traditionally accomplished by chemical substitution—as in BaxSr1-xTiO3, the material widely investigated for microwave devices in which the dielectric constant (εr) at GHz frequencies is tuned by applying a quasi-static electric field1,2. Heterogeneity associated with chemical substitution in such films, however, can broaden this phase transition by hundreds of degrees3, which is detrimental to tunability and microwave device performance. An alternative way to adjust Tc in ferroelectric films is strain4,5,6,7,8. Here we show that epitaxial strain from a newly developed substrate can be harnessed to increase Tc by hundreds of degrees and produce room-temperature ferroelectricity in strontium titanate, a material that is not normally ferroelectric at any temperature. This strain-induced enhancement in Tc is the largest ever reported. Spatially resolved images of the local polarization state reveal a uniformity that far exceeds films tailored by chemical substitution. The high εr at room temperature in these films (nearly 7,000 at 10 GHz) and its sharp dependence on electric field are promising for device applications1,2.

Suggested Citation

  • J. H. Haeni & P. Irvin & W. Chang & R. Uecker & P. Reiche & Y. L. Li & S. Choudhury & W. Tian & M. E. Hawley & B. Craigo & A. K. Tagantsev & X. Q. Pan & S. K. Streiffer & L. Q. Chen & S. W. Kirchoefer, 2004. "Room-temperature ferroelectricity in strained SrTiO3," Nature, Nature, vol. 430(7001), pages 758-761, August.
    • Handle: RePEc:nat:nature:v:430:y:2004:i:7001:d:10.1038_nature02773
    DOI: 10.1038/nature02773
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    Cited by:

    1. Vipul Chaturvedi & Supriya Ghosh & Dominique Gautreau & William M. Postiglione & John E. Dewey & Patrick Quarterman & Purnima P. Balakrishnan & Brian J. Kirby & Hua Zhou & Huikai Cheng & Amanda Huon &, 2022. "Room-temperature valence transition in a strain-tuned perovskite oxide," Nature Communications, Nature, vol. 13(1), pages 1-12, December.

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