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Megagauss sensors

Author

Listed:
  • A. Husmann

    (The University of Chicago)

  • J. B. Betts

    (Los Alamos National Laboratory)

  • G. S. Boebinger

    (Los Alamos National Laboratory)

  • A. Migliori

    (Los Alamos National Laboratory)

  • T. F. Rosenbaum

    (The University of Chicago)

  • M.-L. Saboungi

    (Argonne National Laboratory
    CRMD-CNRS)

Abstract

Magnetic fields change the way that electrons move through solids. The nature of these changes reveals information about the electronic structure of a material and, in auspicious circumstances, can be harnessed for applications. The silver chalcogenides, Ag2Se and Ag2Te, are non-magnetic materials, but their electrical resistance can be made very sensitive to magnetic field by adding small amounts—just 1 part in 10,000—of excess silver1,2,3,4. Here we show that the resistance of Ag2Se displays a large, nearly linear increase with applied magnetic field without saturation to the highest fields available, 600,000 gauss, more than a million times the Earth's magnetic field. These characteristics of large (thousands of per cent) and near-linear response over a large field range make the silver chalcogenides attractive as magnetic-field sensors, especially in physically tiny megagauss (106 G) pulsed magnets where large fields have been produced but accurate calibration has proved elusive. High-field studies at low temperatures reveal both oscillations in the magnetoresistance and a universal scaling form that point to a quantum origin5,6 for this material's unprecedented behaviour.

Suggested Citation

  • A. Husmann & J. B. Betts & G. S. Boebinger & A. Migliori & T. F. Rosenbaum & M.-L. Saboungi, 2002. "Megagauss sensors," Nature, Nature, vol. 417(6887), pages 421-424, May.
  • Handle: RePEc:nat:nature:v:417:y:2002:i:6887:d:10.1038_417421a
    DOI: 10.1038/417421a
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