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Response of a strained semiconductor structure

Author

Listed:
  • Feng Liu

    (University of Utah)

  • Paul Rugheimer

    (University of Wisconsin)

  • E. Mateeva

    (Colorado School of Mines)

  • D. E. Savage

    (University of Wisconsin)

  • M. G. Lagally

    (University of Wisconsin)

Abstract

The nanomechanical properties of thin silicon films will become increasingly critical in semiconductor devices, particularly in the context of substrates that consist of a silicon film on an insulating layer (known as silicon-on-insulator, or SOI, substrates). Here we use very small germanium crystals as a new type of nanomechanical stressor to demonstrate a surprising mechanical behaviour of the thin layer of silicon in SOI substrates, and to show that there is a large local reduction in the viscosity of the oxide on which the silicon layer rests. These findings have implications for the use of SOI substrates in nanoelectronic devices.

Suggested Citation

  • Feng Liu & Paul Rugheimer & E. Mateeva & D. E. Savage & M. G. Lagally, 2002. "Response of a strained semiconductor structure," Nature, Nature, vol. 416(6880), pages 498-498, April.
    • Handle: RePEc:nat:nature:v:416:y:2002:i:6880:d:10.1038_416498a
    DOI: 10.1038/416498a
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    Cited by:

    1. Feridoun Samavat* & Zahra Fereidouni & Faezeh Ghaderi, 2018. "Study of the Structural Properties and Morphologies of Gold Thin Films Deposition by Annealing," Journal of Biotechnology Research, Academic Research Publishing Group, vol. 4(11), pages 83-88, 11-2018.

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