Author
Listed:
- J. H. Schön
(Bell Laboratories, Lucent Technologies)
- M. Dorget
(GPMD-Université Paris
Surfaces et Supraconducteurs CNRS UPR5-ESPCI)
- F. C. Beuran
(GPMD-Université Paris
Wintici SA)
- X. Z. Zu
(Surfaces et Supraconducteurs CNRS UPR5-ESPCI)
- E. Arushanov
(Surfaces et Supraconducteurs CNRS UPR5-ESPCI
Institute of Applied Physics, Academy of Sciences of the Moldova Republic)
- C. Deville Cavellin
(GPMD-Université Paris
Surfaces et Supraconducteurs CNRS UPR5-ESPCI)
- M. Laguës
(Surfaces et Supraconducteurs CNRS UPR5-ESPCI)
Abstract
Understanding the doping mechanisms in the simplest superconducting copper oxide—the infinite-layer compound ACuO2 (where A is an alkaline earth metal)—is an excellent way of investigating the pairing mechanism in high-transition-temperature (high-Tc) superconductors more generally1,2,3,4. Gate-induced modulation of the carrier concentration5,6,7 to obtain superconductivity is a powerful means of achieving such understanding: it minimizes the effects of potential scattering by impurities, and of structural modifications arising from chemical dopants. Here we report the transport properties of thin films of the infinite-layer compound CaCuO2 using field-effect doping. At high hole- and electron-doping levels, superconductivity is induced in the nominally insulating material. Maximum values of Tc of 89 K and 34 K are observed respectively for hole- and electron-type doping of around 0.15 charge carriers per CuO2. We can explore the whole doping diagram of the CuO2 plane while changing only a single electric parameter, the gate voltage.
Suggested Citation
J. H. Schön & M. Dorget & F. C. Beuran & X. Z. Zu & E. Arushanov & C. Deville Cavellin & M. Laguës, 2001.
"Superconductivity in CaCuO2 as a result of field-effect doping,"
Nature, Nature, vol. 414(6862), pages 434-436, November.
Handle:
RePEc:nat:nature:v:414:y:2001:i:6862:d:10.1038_35106539
DOI: 10.1038/35106539
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