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Epitaxial diamond polytypes on silicon

Author

Listed:
  • Y. Lifshitz

    (Center of Super-Diamond and Advanced Films, City University of Hong Kong)

  • X. F. Duan

    (Center of Super-Diamond and Advanced Films, City University of Hong Kong
    Beijing Laboratory of Electron Microscopy, Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences)

  • N. G. Shang

    (Center of Super-Diamond and Advanced Films, City University of Hong Kong)

  • Q. Li

    (Center of Super-Diamond and Advanced Films, City University of Hong Kong)

  • L. Wan

    (Beijing Laboratory of Electron Microscopy, Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences)

  • I. Bello

    (Center of Super-Diamond and Advanced Films, City University of Hong Kong
    City University of Hong Kong)

  • S. T. Lee

    (Center of Super-Diamond and Advanced Films, City University of Hong Kong
    City University of Hong Kong)

Abstract

Carbon is unique in the variety of configurations it can adopt with itself and other elements. Here we show how ion beams can be used to nanostructure various diamond polytypes, epitaxially aligning them to a silicon substrate. The ready controllability of ion beams, which are already used to manufacture submicrometre-scale devices, means that our findings should enable new carbon and non-carbon materials to be nanostructured for a host of applications.

Suggested Citation

  • Y. Lifshitz & X. F. Duan & N. G. Shang & Q. Li & L. Wan & I. Bello & S. T. Lee, 2001. "Epitaxial diamond polytypes on silicon," Nature, Nature, vol. 412(6845), pages 404-404, July.
    • Handle: RePEc:nat:nature:v:412:y:2001:i:6845:d:10.1038_35086656
    DOI: 10.1038/35086656
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