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Pattern formation in semiconductors

Author

Listed:
  • V. V. Bel'kov

    (Institut für Experimentelle und Angewandte Physik, Universität Regensburg)

  • J. Hirschinger

    (Institut für Experimentelle und Angewandte Physik, Universität Regensburg)

  • V. Novák

    (Institute of Electrical Engineering, AV ČR)

  • F.-J. Niedernostheide

    (Institut für Experimentelle und Angewandte Physik, Universität Regensburg)

  • S.D. Ganichev

    (Institut für Experimentelle und Angewandte Physik, Universität Regensburg)

  • W. Prettl

    (Institut für Experimentelle und Angewandte Physik, Universität Regensburg)

Abstract

In semiconductors, nonlinear generation and recombination processes of free carriers and nonlinear charge transport can give rise to non-equilibrium phase transitions1, 2. At low temperatures, the basic nonlinearity is due to the autocatalytic generation of free carriers by impact ionization of shallow impurities. The electric field accelerates free electrons, causing an abrupt increase in free carrier density at a critical electric field. In static electric fields, this nonlinearity is known to yield complex filamentary current patterns bound to electric contacts3.

Suggested Citation

  • V. V. Bel'kov & J. Hirschinger & V. Novák & F.-J. Niedernostheide & S.D. Ganichev & W. Prettl, 1999. "Pattern formation in semiconductors," Nature, Nature, vol. 397(6718), pages 398-398, February.
  • Handle: RePEc:nat:nature:v:397:y:1999:i:6718:d:10.1038_17040
    DOI: 10.1038/17040
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