Author
Listed:
- Shih-Chi Yang
(Swiss Federal Laboratories for Materials Science and Technology)
- Tzu-Ying Lin
(National Tsing Hua University)
- Mario Ochoa
(University of Cantabria)
- Huagui Lai
(Swiss Federal Laboratories for Materials Science and Technology)
- Radha Kothandaraman
(Swiss Federal Laboratories for Materials Science and Technology)
- Fan Fu
(Swiss Federal Laboratories for Materials Science and Technology)
- Ayodhya N. Tiwari
(Swiss Federal Laboratories for Materials Science and Technology)
- Romain Carron
(Swiss Federal Laboratories for Materials Science and Technology)
Abstract
Bifacial Cu(In,Ga)Se2 (CIGS) solar cells are attractive for a range of applications, but their low power conversion efficiency is a limitation. To improve their efficiency, the formation of GaOx at the CIGS/transparent-conducting-oxide interface and charge recombination near this interface under rear illumination need to be suppressed. In the study reported here we prevented the formation of GaOx by silver-promoted low-temperature growth of the CIGS layer. This process also led to an improvement in the absorber quality, a steep Ga gradient near the back interface and reduced the absorption of the transparent conducting oxide. We also report here a certified bifacial solar cell on a glass substrate with efficiencies of 19.77% and 10.89% under front and rear illumination, respectively. We also fabricated bifacial solar cells directly on flexible substrates. Finally, we prepared bifacial perovskite/CIGS tandem solar cells in a four-terminal configuration, achieving a power generation density of 28.0 mW cm-2 under 1 Sun and 30% albedo illumination.
Suggested Citation
Shih-Chi Yang & Tzu-Ying Lin & Mario Ochoa & Huagui Lai & Radha Kothandaraman & Fan Fu & Ayodhya N. Tiwari & Romain Carron, 2023.
"Efficiency boost of bifacial Cu(In,Ga)Se2 thin-film solar cells for flexible and tandem applications with silver-assisted low-temperature process,"
Nature Energy, Nature, vol. 8(1), pages 40-51, January.
Handle:
RePEc:nat:natene:v:8:y:2023:i:1:d:10.1038_s41560-022-01157-9
DOI: 10.1038/s41560-022-01157-9
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