Author
Listed:
- Malte Köhler
(Forschungszentrum Jülich
RWTH Aachen University)
- Manuel Pomaska
(Forschungszentrum Jülich)
- Paul Procel
(Delft University of Technology
Institute of Micro and Nanoelectronics, University San Francisco de Quito)
- Rudi Santbergen
(Delft University of Technology)
- Alexandr Zamchiy
(Novosibirsk State University
Kutateladze Institute of Thermophysics SB RAS)
- Bart Macco
(Eindhoven University of Technology)
- Andreas Lambertz
(Forschungszentrum Jülich)
- Weiyuan Duan
(Forschungszentrum Jülich)
- Pengfei Cao
(Forschungszentrum Jülich)
- Benjamin Klingebiel
(Forschungszentrum Jülich)
- Shenghao Li
(Forschungszentrum Jülich)
- Alexander Eberst
(Forschungszentrum Jülich
RWTH Aachen University)
- Martina Luysberg
(Forschungszentrum Jülich)
- Kaifu Qiu
(Forschungszentrum Jülich
Sun Yat-Sen University)
- Olindo Isabella
(Delft University of Technology)
- Friedhelm Finger
(Forschungszentrum Jülich)
- Thomas Kirchartz
(Forschungszentrum Jülich
University of Duisburg-Essen)
- Uwe Rau
(Forschungszentrum Jülich
RWTH Aachen University)
- Kaining Ding
(Forschungszentrum Jülich)
Abstract
A highly transparent passivating contact (TPC) as front contact for crystalline silicon (c-Si) solar cells could in principle combine high conductivity, excellent surface passivation and high optical transparency. However, the simultaneous optimization of these features remains challenging. Here, we present a TPC consisting of a silicon-oxide tunnel layer followed by two layers of hydrogenated nanocrystalline silicon carbide (nc-SiC:H(n)) deposited at different temperatures and a sputtered indium tin oxide (ITO) layer (c-Si(n)/SiO2/nc-SiC:H(n)/ITO). While the wide band gap of nc-SiC:H(n) ensures high optical transparency, the double layer design enables good passivation and high conductivity translating into an improved short-circuit current density (40.87 mA cm−2), fill factor (80.9%) and efficiency of 23.99 ± 0.29% (certified). Additionally, this contact avoids the need for additional hydrogenation or high-temperature postdeposition annealing steps. We investigate the passivation mechanism and working principle of the TPC and provide a loss analysis based on numerical simulations outlining pathways towards conversion efficiencies of 26%.
Suggested Citation
Malte Köhler & Manuel Pomaska & Paul Procel & Rudi Santbergen & Alexandr Zamchiy & Bart Macco & Andreas Lambertz & Weiyuan Duan & Pengfei Cao & Benjamin Klingebiel & Shenghao Li & Alexander Eberst & M, 2021.
"A silicon carbide-based highly transparent passivating contact for crystalline silicon solar cells approaching efficiencies of 24%,"
Nature Energy, Nature, vol. 6(5), pages 529-537, May.
Handle:
RePEc:nat:natene:v:6:y:2021:i:5:d:10.1038_s41560-021-00806-9
DOI: 10.1038/s41560-021-00806-9
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