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Anomalous diffusion along metal/ceramic interfaces

Author

Listed:
  • Aakash Kumar

    (University of Pennsylvania)

  • Hagit Barda

    (Technion - Israel Institute of Technology)

  • Leonid Klinger

    (Technion - Israel Institute of Technology)

  • Michael W. Finnis

    (Imperial College)

  • Vincenzo Lordi

    (Lawrence Livermore National Laboratory)

  • Eugen Rabkin

    (Technion - Israel Institute of Technology)

  • David J. Srolovitz

    (University of Pennsylvania
    University of Pennsylvania
    City University of Hong Kong)

Abstract

Interface diffusion along a metal/ceramic interface present in numerous energy and electronic devices can critically affect their performance and stability. Hole formation in a polycrystalline Ni film on an α-Al2O3 substrate coupled with a continuum diffusion analysis demonstrates that Ni diffusion along the Ni/α-Al2O3 interface is surprisingly fast. Ab initio calculations demonstrate that both Ni vacancy formation and migration energies at the coherent Ni/α-Al2O3 interface are much smaller than in bulk Ni, suggesting that the activation energy for diffusion along coherent Ni/α-Al2O3 interfaces is comparable to that along (incoherent/high angle) grain boundaries. Based on these results, we develop a simple model for diffusion along metal/ceramic interfaces, apply it to a wide range of metal/ceramic systems and validate it with several ab initio calculations. These results suggest that fast metal diffusion along metal/ceramic interfaces should be common, but is not universal.

Suggested Citation

  • Aakash Kumar & Hagit Barda & Leonid Klinger & Michael W. Finnis & Vincenzo Lordi & Eugen Rabkin & David J. Srolovitz, 2018. "Anomalous diffusion along metal/ceramic interfaces," Nature Communications, Nature, vol. 9(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-07724-7
    DOI: 10.1038/s41467-018-07724-7
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