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A simple and robust approach to reducing contact resistance in organic transistors

Author

Listed:
  • Zachary A. Lamport

    (Wake Forest University)

  • Katrina J. Barth

    (Wake Forest University)

  • Hyunsu Lee

    (Wake Forest University)

  • Eliot Gann

    (Materials Science and Engineering Division, National Institute of Standards and Technology)

  • Sebastian Engmann

    (Materials Science and Engineering Division, National Institute of Standards and Technology)

  • Hu Chen

    (King Abdullah University of Science and Technology (KAUST))

  • Martin Guthold

    (Wake Forest University)

  • Iain McCulloch

    (King Abdullah University of Science and Technology (KAUST)
    Imperial College London)

  • John E. Anthony

    (University of Kentucky)

  • Lee J. Richter

    (Materials Science and Engineering Division, National Institute of Standards and Technology)

  • Dean M. DeLongchamp

    (Materials Science and Engineering Division, National Institute of Standards and Technology)

  • Oana D. Jurchescu

    (Wake Forest University)

Abstract

Efficient injection of charge carriers from the contacts into the semiconductor layer is crucial for achieving high-performance organic devices. The potential drop necessary to accomplish this process yields a resistance associated with the contacts, namely the contact resistance. A large contact resistance can limit the operation of devices and even lead to inaccuracies in the extraction of the device parameters. Here, we demonstrate a simple and efficient strategy for reducing the contact resistance in organic thin-film transistors by more than an order of magnitude by creating high work function domains at the surface of the injecting electrodes to promote channels of enhanced injection. We find that the method is effective for both organic small molecule and polymer semiconductors, where we achieved a contact resistance as low as 200 Ωcm and device charge carrier mobilities as high as 20 cm2V−1s−1, independent of the applied gate voltage.

Suggested Citation

  • Zachary A. Lamport & Katrina J. Barth & Hyunsu Lee & Eliot Gann & Sebastian Engmann & Hu Chen & Martin Guthold & Iain McCulloch & John E. Anthony & Lee J. Richter & Dean M. DeLongchamp & Oana D. Jurch, 2018. "A simple and robust approach to reducing contact resistance in organic transistors," Nature Communications, Nature, vol. 9(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-07388-3
    DOI: 10.1038/s41467-018-07388-3
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    Cited by:

    1. Illia Dobryden & Vladimir V. Korolkov & Vincent Lemaur & Matthew Waldrip & Hio-Ieng Un & Dimitrios Simatos & Leszek J. Spalek & Oana D. Jurchescu & Yoann Olivier & Per M. Claesson & Deepak Venkateshva, 2022. "Dynamic self-stabilization in the electronic and nanomechanical properties of an organic polymer semiconductor," Nature Communications, Nature, vol. 13(1), pages 1-11, December.
    2. Bo Tong & Jinhong Du & Lichang Yin & Dingdong Zhang & Weimin Zhang & Yu Liu & Yuning Wei & Chi Liu & Yan Liang & Dong-Ming Sun & Lai-Peng Ma & Hui-Ming Cheng & Wencai Ren, 2022. "A polymer electrolyte design enables ultralow-work-function electrode for high-performance optoelectronics," Nature Communications, Nature, vol. 13(1), pages 1-12, December.

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