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Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

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  • Slavomír Nemšák

    (University of California
    Lawrence Berkeley National Laboratory
    Forschungszentrum Jülich
    Lawrence Berkeley National Laboratory)

  • Mathias Gehlmann

    (University of California
    Lawrence Berkeley National Laboratory
    Forschungszentrum Jülich)

  • Cheng-Tai Kuo

    (University of California
    Lawrence Berkeley National Laboratory)

  • Shih-Chieh Lin

    (University of California
    Lawrence Berkeley National Laboratory)

  • Christoph Schlueter

    (Harwell Science and Innovation Campus
    Deutsches Elektronen-Synchrotron)

  • Ewa Mlynczak

    (Forschungszentrum Jülich)

  • Tien-Lin Lee

    (Harwell Science and Innovation Campus)

  • Lukasz Plucinski

    (Forschungszentrum Jülich)

  • Hubert Ebert

    (Ludwig Maximillian University)

  • Igor Marco

    (Uppsala University
    Asia Pacific Center for Theoretical Physics)

  • Ján Minár

    (University of West Bohemia)

  • Claus M. Schneider

    (University of California
    Forschungszentrum Jülich)

  • Charles S. Fadley

    (University of California
    Lawrence Berkeley National Laboratory)

Abstract

The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.

Suggested Citation

  • Slavomír Nemšák & Mathias Gehlmann & Cheng-Tai Kuo & Shih-Chieh Lin & Christoph Schlueter & Ewa Mlynczak & Tien-Lin Lee & Lukasz Plucinski & Hubert Ebert & Igor Marco & Ján Minár & Claus M. Schneider , 2018. "Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide," Nature Communications, Nature, vol. 9(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-05823-z
    DOI: 10.1038/s41467-018-05823-z
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