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Massively parallel fabrication of crack-defined gold break junctions featuring sub-3 nm gaps for molecular devices

Author

Listed:
  • Valentin Dubois

    (KTH Royal Institute of Technology)

  • Shyamprasad N. Raja

    (KTH Royal Institute of Technology)

  • Pascal Gehring

    (Delft University of Technology)

  • Sabina Caneva

    (Delft University of Technology)

  • Herre S. J. Zant

    (Delft University of Technology)

  • Frank Niklaus

    (KTH Royal Institute of Technology)

  • Göran Stemme

    (KTH Royal Institute of Technology)

Abstract

Break junctions provide tip-shaped contact electrodes that are fundamental components of nano and molecular electronics. However, the fabrication of break junctions remains notoriously time-consuming and difficult to parallelize. Here we demonstrate true parallel fabrication of gold break junctions featuring sub-3 nm gaps on the wafer-scale, by relying on a novel self-breaking mechanism based on controlled crack formation in notched bridge structures. We achieve fabrication densities as high as 7 million junctions per cm2, with fabrication yields of around 7% for obtaining crack-defined break junctions with sub-3 nm gaps of fixed gap width that exhibit electron tunneling. We also form molecular junctions using dithiol-terminated oligo(phenylene ethynylene) (OPE3) to demonstrate the feasibility of our approach for electrical probing of molecules down to liquid helium temperatures. Our technology opens a whole new range of experimental opportunities for nano and molecular electronics applications, by enabling very large-scale fabrication of solid-state break junctions.

Suggested Citation

  • Valentin Dubois & Shyamprasad N. Raja & Pascal Gehring & Sabina Caneva & Herre S. J. Zant & Frank Niklaus & Göran Stemme, 2018. "Massively parallel fabrication of crack-defined gold break junctions featuring sub-3 nm gaps for molecular devices," Nature Communications, Nature, vol. 9(1), pages 1-10, December.
  • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-05785-2
    DOI: 10.1038/s41467-018-05785-2
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