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Emerging many-body effects in semiconductor artificial graphene with low disorder

Author

Listed:
  • Lingjie Du

    (Columbia University)

  • Sheng Wang

    (Columbia University)

  • Diego Scarabelli

    (Columbia University)

  • Loren N. Pfeiffer

    (Princeton University)

  • Ken W. West

    (Princeton University)

  • Saeed Fallahi

    (Purdue University)

  • Geoff C. Gardner

    (Purdue University)

  • Michael J. Manfra

    (Purdue University)

  • Vittorio Pellegrini

    (Istituto Italiano di Tecnologia, Graphene Labs)

  • Shalom J. Wind

    (Columbia University)

  • Aron Pinczuk

    (Columbia University
    Columbia University)

Abstract

The interplay between electron–electron interactions and the honeycomb topology is expected to produce exotic quantum phenomena and find applications in advanced devices. Semiconductor-based artificial graphene (AG) is an ideal system for these studies that combines high-mobility electron gases with AG topology. However, to date, low-disorder conditions that reveal the interplay of electron–electron interaction with AG symmetry have not been achieved. Here, we report the creation of low-disorder AG that preserves the near-perfection of the pristine electron layer by fabricating small period triangular antidot lattices on high-quality quantum wells. Resonant inelastic light scattering spectra show collective spin-exciton modes at the M-point's nearly flatband saddle-point singularity in the density of states. The observed Coulomb exchange interaction energies are comparable to the gap of Dirac bands at the M-point, demonstrating interplay between quasiparticle interactions and the AG potential. The saddle-point exciton energies are in the terahertz range, making low-disorder AG suitable for contemporary optoelectronic applications.

Suggested Citation

  • Lingjie Du & Sheng Wang & Diego Scarabelli & Loren N. Pfeiffer & Ken W. West & Saeed Fallahi & Geoff C. Gardner & Michael J. Manfra & Vittorio Pellegrini & Shalom J. Wind & Aron Pinczuk, 2018. "Emerging many-body effects in semiconductor artificial graphene with low disorder," Nature Communications, Nature, vol. 9(1), pages 1-6, December.
  • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-05775-4
    DOI: 10.1038/s41467-018-05775-4
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