Author
Listed:
- Miguel M. Ugeda
(Donostia International Physics Center (DIPC)
Centro de Física de Materiales (CSIC-UPV/EHU)
Ikerbasque, Basque Foundation for Science)
- Artem Pulkin
(Ecole Polytechnique Fédérale de Lausanne (EPFL))
- Shujie Tang
(Advanced Light Source, Lawrence Berkeley National Laboratory
SLAC National Accelerator Laboratory)
- Hyejin Ryu
(Advanced Light Source, Lawrence Berkeley National Laboratory
Center for Spintronics, Korea Institute of Science and Technology)
- Quansheng Wu
(Ecole Polytechnique Fédérale de Lausanne (EPFL)
Ecole Polytechnique Fédérale de Lausanne (EPFL))
- Yi Zhang
(Advanced Light Source, Lawrence Berkeley National Laboratory
SLAC National Accelerator Laboratory
Nanjing University)
- Dillon Wong
(University of California at Berkeley)
- Zahra Pedramrazi
(University of California at Berkeley)
- Ana Martín-Recio
(University of California at Berkeley
Universidad Autónoma de Madrid)
- Yi Chen
(University of California at Berkeley)
- Feng Wang
(University of California at Berkeley
Lawrence Berkeley National Laboratory
Kavli Energy NanoScience Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory)
- Zhi-Xun Shen
(SLAC National Accelerator Laboratory
Stanford University)
- Sung-Kwan Mo
(Advanced Light Source, Lawrence Berkeley National Laboratory)
- Oleg V. Yazyev
(Ecole Polytechnique Fédérale de Lausanne (EPFL)
Ecole Polytechnique Fédérale de Lausanne (EPFL))
- Michael F. Crommie
(University of California at Berkeley
Lawrence Berkeley National Laboratory
Kavli Energy NanoScience Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory)
Abstract
Transition metal dichalcogenide materials are unique in the wide variety of structural and electronic phases they exhibit in the two-dimensional limit. Here we show how such polymorphic flexibility can be used to achieve topological states at highly ordered phase boundaries in a new quantum spin Hall insulator (QSHI), 1T′-WSe2. We observe edge states at the crystallographically aligned interface between a quantum spin Hall insulating domain of 1T′-WSe2 and a semiconducting domain of 1H-WSe2 in contiguous single layers. The QSHI nature of single-layer 1T′-WSe2 is verified using angle-resolved photoemission spectroscopy to determine band inversion around a 120 meV energy gap, as well as scanning tunneling spectroscopy to directly image edge-state formation. Using this edge-state geometry we confirm the predicted penetration depth of one-dimensional interface states into the two-dimensional bulk of a QSHI for a well-specified crystallographic direction. These interfaces create opportunities for testing predictions of the microscopic behavior of topologically protected boundary states.
Suggested Citation
Miguel M. Ugeda & Artem Pulkin & Shujie Tang & Hyejin Ryu & Quansheng Wu & Yi Zhang & Dillon Wong & Zahra Pedramrazi & Ana Martín-Recio & Yi Chen & Feng Wang & Zhi-Xun Shen & Sung-Kwan Mo & Oleg V. Ya, 2018.
"Observation of topologically protected states at crystalline phase boundaries in single-layer WSe2,"
Nature Communications, Nature, vol. 9(1), pages 1-7, December.
Handle:
RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-05672-w
DOI: 10.1038/s41467-018-05672-w
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