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Ultra-narrow-band near-infrared thermal exciton radiation in intrinsic one-dimensional semiconductors

Author

Listed:
  • Taishi Nishihara

    (Nagoya University
    Nagoya University)

  • Akira Takakura

    (Nagoya University
    Nagoya University)

  • Yuhei Miyauchi

    (Nagoya University
    Nagoya University
    Kyoto University)

  • Kenichiro Itami

    (Nagoya University
    Nagoya University
    Nagoya University)

Abstract

Thermal radiation is the most primitive light emission phenomenon of materials. Broadband radiation from red-hot materials is well known as the kick-starter phenomenon of modern quantum physics in the early twentieth century; even nowadays, its artificial control plays a central role in modern science and technology. Herein, we report the fundamental thermal radiation properties of intrinsic one-dimensional semiconductors and metals, which have not been elucidated because of significant technical challenges. We observed narrow-band near-infrared radiation from semiconducting single-walled carbon nanotubes at 1000–2000 K in contrast to its broadband metallic counterpart. We confirm that the ultra-narrow-band radiation is enabled by the thermal generation of excitons that are hydrogen-like neutral exotic atoms comprising mutually bound electrons and holes. Our findings uncover the robust quantum correlations in intrinsic one-dimensional semiconductors even at 2000 K; additionally, the findings provide an opportunity for excitonic optothermal engineering toward the realization of efficient thermophotovoltaic energy harvesting.

Suggested Citation

  • Taishi Nishihara & Akira Takakura & Yuhei Miyauchi & Kenichiro Itami, 2018. "Ultra-narrow-band near-infrared thermal exciton radiation in intrinsic one-dimensional semiconductors," Nature Communications, Nature, vol. 9(1), pages 1-7, December.
  • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-05598-3
    DOI: 10.1038/s41467-018-05598-3
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