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Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors

Author

Listed:
  • Yuhei Miyauchi

    (Kyoto University
    Nagoya University)

  • Satoru Konabe

    (Tokyo University of Science
    Hosei University)

  • Feijiu Wang

    (Kyoto University
    Nagoya University)

  • Wenjin Zhang

    (Kyoto University)

  • Alexander Hwang

    (Rice University
    Rice University)

  • Yusuke Hasegawa

    (Kyoto University)

  • Lizhong Zhou

    (Kyoto University)

  • Shinichiro Mouri

    (Kyoto University
    Ritsumeikan University)

  • Minglin Toh

    (National University of Singapore)

  • Goki Eda

    (National University of Singapore
    National University of Singapore
    National University of Singapore)

  • Kazunari Matsuda

    (Kyoto University)

Abstract

Monolayers of transition metal dichalcogenides (TMDC) have recently emerged as excellent platforms for exploiting new physics and applications relying on electronic valley degrees of freedom in two-dimensional (2D) systems. Here, we demonstrate that Coulomb screening by 2D carriers plays a critical role in excitonic valley pseudospin relaxation processes in naturally carrier-doped WSe2 monolayers (1L-WSe2). The exciton valley relaxation times were examined using polarization- and time-resolved photoluminescence spectroscopy at temperatures ranging from 10 to 160 K. We show that the temperature-dependent exciton valley relaxation times in 1L-WSe2 under various exciton and carrier densities can be understood using a unified framework of intervalley exciton scattering via momentum-dependent long-range electron–hole exchange interactions screened by 2D carriers that depend on the carrier density and the exciton linewidth. Moreover, the developed framework was successfully applied to engineer the valley polarization of excitons in 1L-WSe2. These findings may facilitate the development of TMDC-based opto-valleytronic devices.

Suggested Citation

  • Yuhei Miyauchi & Satoru Konabe & Feijiu Wang & Wenjin Zhang & Alexander Hwang & Yusuke Hasegawa & Lizhong Zhou & Shinichiro Mouri & Minglin Toh & Goki Eda & Kazunari Matsuda, 2018. "Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors," Nature Communications, Nature, vol. 9(1), pages 1-10, December.
  • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-04988-x
    DOI: 10.1038/s41467-018-04988-x
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    Cited by:

    1. Hongzhi Zhou & Qingjie Feng & Cheng Sun & Yahui Li & Weijian Tao & Wei Tang & Linjun Li & Enzheng Shi & Guangjun Nan & Haiming Zhu, 2024. "Robust excitonic light emission in 2D tin halide perovskites by weak excited state polaronic effect," Nature Communications, Nature, vol. 15(1), pages 1-11, December.

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