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Chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering

Author

Listed:
  • H. Y. Sun

    (Nanjing University)

  • Z. W. Mao

    (Nanjing University)

  • T. W. Zhang

    (Nanjing University)

  • L. Han

    (Nanjing University)

  • T. T. Zhang

    (Nanjing University)

  • X. B. Cai

    (Hong Kong University of Science and Technology)

  • X. Guo

    (The Hong Kong Polytechnic University, Hung Hom)

  • Y. F. Li

    (Nanjing University)

  • Y. P. Zang

    (Nanjing University)

  • W. Guo

    (Nanjing University)

  • J. H. Song

    (Nanjing University)

  • D. X. Ji

    (Nanjing University)

  • C. Y. Gu

    (Nanjing University)

  • C. Tang

    (Nanjing University)

  • Z. B. Gu

    (Nanjing University)

  • N. Wang

    (Hong Kong University of Science and Technology)

  • Y. Zhu

    (The Hong Kong Polytechnic University, Hung Hom)

  • D. G. Schlom

    (Cornell University
    Kavli Institute at Cornell for Nanoscale Science)

  • Y. F. Nie

    (Nanjing University)

  • X. Q. Pan

    (Nanjing University
    University of California, Irvine)

Abstract

Creating oxide interfaces with precise chemical specificity at the atomic layer level is desired for the engineering of quantum phases and electronic applications, but highly challenging, owing partially to the lack of in situ tools to monitor the chemical composition and completeness of the surface layer during growth. Here we report the in situ observation of atomic layer-by-layer inner potential variations by analysing the Kikuchi lines during epitaxial growth of strontium titanate, providing a powerful real-time technique to monitor and control the chemical composition during growth. A model combining the effects of mean inner potential and step edge density (roughness) reveals the underlying mechanism of the complex and previously not well-understood reflection high-energy electron diffraction oscillations observed in the shuttered growth of oxide films. General rules are proposed to guide the synthesis of atomically and chemically sharp oxide interfaces, opening up vast opportunities for the exploration of intriguing quantum phenomena at oxide interfaces.

Suggested Citation

  • H. Y. Sun & Z. W. Mao & T. W. Zhang & L. Han & T. T. Zhang & X. B. Cai & X. Guo & Y. F. Li & Y. P. Zang & W. Guo & J. H. Song & D. X. Ji & C. Y. Gu & C. Tang & Z. B. Gu & N. Wang & Y. Zhu & D. G. Schl, 2018. "Chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering," Nature Communications, Nature, vol. 9(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-04903-4
    DOI: 10.1038/s41467-018-04903-4
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    Cited by:

    1. Moritz L. Weber & Dylan Jennings & Sarah Fearn & Andrea Cavallaro & Michal Prochazka & Alexander Gutsche & Lisa Heymann & Jia Guo & Liam Yasin & Samuel J. Cooper & Joachim Mayer & Wolfgang Rheinheimer, 2024. "Thermal stability and coalescence dynamics of exsolved metal nanoparticles at charged perovskite surfaces," Nature Communications, Nature, vol. 15(1), pages 1-14, December.

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