Author
Listed:
- L. M. Zheng
(Harbin Institute of Technology)
- X. Renshaw Wang
(Nanyang Technological University)
- W. M. Lü
(Harbin Institute of Technology)
- C. J. Li
(National University of Singapore)
- T. R. Paudel
(University of Nebraska)
- Z. Q. Liu
(Beihang University)
- Z. Huang
(National University of Singapore)
- S. W. Zeng
(National University of Singapore)
- Kun Han
(National University of Singapore)
- Z. H. Chen
(University of California, Berkeley
Lawrence Berkeley National Laboratory
Harbin Institute of Technology)
- X. P. Qiu
(Tongji University)
- M. S. Li
(National University of Singapore)
- Shize Yang
(Materials Science and Technology Division, Oak Ridge National Laboratory)
- B. Yang
(Harbin Institute of Technology)
- Matthew F. Chisholm
(Materials Science and Technology Division, Oak Ridge National Laboratory)
- L. W. Martin
(University of California, Berkeley
Lawrence Berkeley National Laboratory)
- S. J. Pennycook
(National University of Singapore)
- E. Y. Tsymbal
(University of Nebraska)
- J. M. D. Coey
(Trinity College
Beihang University)
- W. W. Cao
(Harbin Institute of Technology
The Pennsylvania State University)
Abstract
Complex-oxide materials exhibit physical properties that involve the interplay of charge and spin degrees of freedom. However, an ambipolar oxide that is able to exhibit both electron-doped and hole-doped ferromagnetism in the same material has proved elusive. Here we report ambipolar ferromagnetism in LaMnO3, with electron–hole asymmetry of the ferromagnetic order. Starting from an undoped atomically thin LaMnO3 film, we electrostatically dope the material with electrons or holes according to the polarity of a voltage applied across an ionic liquid gate. Magnetotransport characterization reveals that an increase of either electron-doping or hole-doping induced ferromagnetic order in this antiferromagnetic compound, and leads to an insulator-to-metal transition with colossal magnetoresistance showing electron–hole asymmetry. These findings are supported by density functional theory calculations, showing that strengthening of the inter-plane ferromagnetic exchange interaction is the origin of the ambipolar ferromagnetism. The result raises the prospect of exploiting ambipolar magnetic functionality in strongly correlated electron systems.
Suggested Citation
L. M. Zheng & X. Renshaw Wang & W. M. Lü & C. J. Li & T. R. Paudel & Z. Q. Liu & Z. Huang & S. W. Zeng & Kun Han & Z. H. Chen & X. P. Qiu & M. S. Li & Shize Yang & B. Yang & Matthew F. Chisholm & L. W, 2018.
"Ambipolar ferromagnetism by electrostatic doping of a manganite,"
Nature Communications, Nature, vol. 9(1), pages 1-7, December.
Handle:
RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-04233-5
DOI: 10.1038/s41467-018-04233-5
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Citations
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Cited by:
- Benjamin I. Weintrub & Yu-Ling Hsieh & Sviatoslav Kovalchuk & Jan N. Kirchhof & Kyrylo Greben & Kirill I. Bolotin, 2022.
"Generating intense electric fields in 2D materials by dual ionic gating,"
Nature Communications, Nature, vol. 13(1), pages 1-6, December.
- Ruofan Du & Yuzhu Wang & Mo Cheng & Peng Wang & Hui Li & Wang Feng & Luying Song & Jianping Shi & Jun He, 2022.
"Two-dimensional multiferroic material of metallic p-doped SnSe,"
Nature Communications, Nature, vol. 13(1), pages 1-9, December.
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