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Two-dimensional electronic transport and surface electron accumulation in MoS2

Author

Listed:
  • M. D. Siao

    (National Taiwan University of Science and Technology)

  • W. C. Shen

    (National Taiwan University of Science and Technology)

  • R. S. Chen

    (National Taiwan University of Science and Technology)

  • Z. W. Chang

    (National Taiwan Normal University)

  • M. C. Shih

    (National Taiwan University)

  • Y. P. Chiu

    (National Taiwan Normal University
    National Taiwan University)

  • C.-M. Cheng

    (National Synchrotron Radiation Research Center
    National Sun Yat-Sen University)

Abstract

Because the surface-to-volume ratio of quasi-two-dimensional materials is extremely high, understanding their surface characteristics is crucial for practically controlling their intrinsic properties and fabricating p-type and n-type layered semiconductors. Van der Waals crystals are expected to have an inert surface because of the absence of dangling bonds. However, here we show that the surface of high-quality synthesized molybdenum disulfide (MoS2) is a major n-doping source. The surface electron concentration of MoS2 is nearly four orders of magnitude higher than that of its inner bulk. Substantial thickness-dependent conductivity in MoS2 nanoflakes was observed. The transfer length method suggested the current transport in MoS2 following a two-dimensional behavior rather than the conventional three-dimensional mode. Scanning tunneling microscopy and angle-resolved photoemission spectroscopy measurements confirmed the presence of surface electron accumulation in this layered material. Notably, the in situ-cleaved surface exhibited a nearly intrinsic state without electron accumulation.

Suggested Citation

  • M. D. Siao & W. C. Shen & R. S. Chen & Z. W. Chang & M. C. Shih & Y. P. Chiu & C.-M. Cheng, 2018. "Two-dimensional electronic transport and surface electron accumulation in MoS2," Nature Communications, Nature, vol. 9(1), pages 1-12, December.
    • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-03824-6
    DOI: 10.1038/s41467-018-03824-6
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