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Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

Author

Listed:
  • Mengxing Wang

    (Beihang University)

  • Wenlong Cai

    (Beihang University)

  • Kaihua Cao

    (Beihang University)

  • Jiaqi Zhou

    (Beihang University)

  • Jerzy Wrona

    (Singulus Technologies)

  • Shouzhong Peng

    (Beihang University)

  • Huaiwen Yang

    (Beihang University)

  • Jiaqi Wei

    (Beihang University)

  • Wang Kang

    (Beihang University)

  • Youguang Zhang

    (Beihang University)

  • Jürgen Langer

    (Singulus Technologies)

  • Berthold Ocker

    (Singulus Technologies)

  • Albert Fert

    (Beihang University
    Univ. Paris-Sud, Universit´e Paris-Saclay)

  • Weisheng Zhao

    (Beihang University)

Abstract

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nano-scale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 Ω µm2, which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against high-temperature diffusion during annealing. The critical switching current density could be lower than 3.0 MA cm−2 for devices with a 45-nm radius.

Suggested Citation

  • Mengxing Wang & Wenlong Cai & Kaihua Cao & Jiaqi Zhou & Jerzy Wrona & Shouzhong Peng & Huaiwen Yang & Jiaqi Wei & Wang Kang & Youguang Zhang & Jürgen Langer & Berthold Ocker & Albert Fert & Weisheng Z, 2018. "Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance," Nature Communications, Nature, vol. 9(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-03140-z
    DOI: 10.1038/s41467-018-03140-z
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    Cited by:

    1. Zhenyi Zheng & Tao Zeng & Tieyang Zhao & Shu Shi & Lizhu Ren & Tongtong Zhang & Lanxin Jia & Youdi Gu & Rui Xiao & Hengan Zhou & Qihan Zhang & Jiaqi Lu & Guilei Wang & Chao Zhao & Huihui Li & Beng Kan, 2024. "Effective electrical manipulation of a topological antiferromagnet by orbital torques," Nature Communications, Nature, vol. 15(1), pages 1-8, December.

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