Publisher Correction: Ballistic geometric resistance resonances in a single surface of a topological insulator

In the original version of this Article, the second and third sentences of the first paragraph of the “Gate voltage and antidot period dependencies” section of the Results originally incorrectly read “The characteristic evolution of the sheet resistance ρ□=ρ□ (B=0) with Vg shown for three antidot samples and an unpatterned reference sample in Fig. 3a. The maxima of ρxx, located between Vg~0.5 and 1 V, reflect the charge neutrality point (CNP), corresponding to an EF position located slightly in the valence band (see band structure in Fig. 3b).” In the corrected version, “ $${\mathrm{\rho }}_\square = {\mathrm{\rho }}_\square (B = 0)$$ ρ □ = ρ □ ( B = 0 ) ” is replaced by “ $${\mathrm{\rho }}_\square = {\mathrm{\rho }}_{{\mathrm{xx}}}(B = 0)$$ ρ □ = ρ xx ( B = 0 ) ”, and “The maxima of $${\mathrm{\rho }}_{{\mathrm{xx}}}$$ ρ xx ” is replaced by “The maxima of $${\mathrm{\rho }}_\square$$ ρ □ ”.