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Electric-field control of anomalous and topological Hall effects in oxide bilayer thin films

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Listed:
  • Yuki Ohuchi

    (University of Tokyo)

  • Jobu Matsuno

    (RIKEN Center for Emergent Matter Science (CEMS))

  • Naoki Ogawa

    (RIKEN Center for Emergent Matter Science (CEMS))

  • Yusuke Kozuka

    (University of Tokyo)

  • Masaki Uchida

    (University of Tokyo)

  • Yoshinori Tokura

    (University of Tokyo
    RIKEN Center for Emergent Matter Science (CEMS))

  • Masashi Kawasaki

    (University of Tokyo
    RIKEN Center for Emergent Matter Science (CEMS))

Abstract

One of the key goals in spintronics is to tame the spin-orbit coupling (SOC) that links spin and motion of electrons, giving rise to intriguing magneto-transport properties in itinerant magnets. Prominent examples of such SOC-based phenomena are the anomalous and topological Hall effects. However, controlling them with electric fields has remained unachieved since an electric field tends to be screened in itinerant magnets. Here we demonstrate that both anomalous and topological Hall effects can be modulated by electric fields in oxide heterostructures consisting of ferromagnetic SrRuO3 and nonmagnetic SrIrO3. We observe a clear electric field effect only when SrIrO3 is inserted between SrRuO3 and a gate dielectric. Our results establish that strong SOC of nonmagnetic materials such as SrIrO3 is essential in electrical tuning of these Hall effects and possibly other SOC-related phenomena.

Suggested Citation

  • Yuki Ohuchi & Jobu Matsuno & Naoki Ogawa & Yusuke Kozuka & Masaki Uchida & Yoshinori Tokura & Masashi Kawasaki, 2018. "Electric-field control of anomalous and topological Hall effects in oxide bilayer thin films," Nature Communications, Nature, vol. 9(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-017-02629-3
    DOI: 10.1038/s41467-017-02629-3
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