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Defects controlled hole doping and multivalley transport in SnSe single crystals

Author

Listed:
  • Zhen Wang

    (Zhejiang University)

  • Congcong Fan

    (Chinese Academy of Sciences
    Chinese Academy of Sciences)

  • Zhixuan Shen

    (Zhejiang University)

  • Chenqiang Hua

    (Zhejiang University)

  • Qifeng Hu

    (Zhejiang University)

  • Feng Sheng

    (Zhejiang University)

  • Yunhao Lu

    (Zhejiang University)

  • Hanyan Fang

    (National University of Singapore)

  • Zhizhan Qiu

    (National University of Singapore)

  • Jiong Lu

    (National University of Singapore)

  • Zhengtai Liu

    (Chinese Academy of Sciences
    Chinese Academy of Sciences)

  • Wanling Liu

    (Chinese Academy of Sciences
    Chinese Academy of Sciences)

  • Yaobo Huang

    (Chinese Academy of Science)

  • Zhu-An Xu

    (Zhejiang University
    Zhejiang University
    Collaborative Innovation Centre of Advanced Microstructures)

  • D. W. Shen

    (Chinese Academy of Sciences
    Chinese Academy of Sciences
    Chinese Academy of Science)

  • Yi Zheng

    (Zhejiang University
    Zhejiang University
    Collaborative Innovation Centre of Advanced Microstructures)

Abstract

SnSe is a promising thermoelectric material with record-breaking figure of merit. However, to date a comprehensive understanding of the electronic structure and most critically, the self-hole-doping mechanism in SnSe is still absent. Here we report the highly anisotropic electronic structure of SnSe investigated by angle-resolved photoemission spectroscopy, in which a unique pudding-mould-shaped valence band with quasi-linear energy dispersion is revealed. We prove that p-type doping in SnSe is extrinsically controlled by local phase segregation of SnSe2 microdomains via interfacial charge transferring. The multivalley nature of the pudding-mould band is manifested in quantum transport by crystallographic axis-dependent weak localisation and exotic non-saturating negative magnetoresistance. Strikingly, quantum oscillations also reveal 3D Fermi surface with unusual interlayer coupling strength in p-SnSe, in which individual monolayers are interwoven by peculiar point dislocation defects. Our results suggest that defect engineering may provide versatile routes in improving the thermoelectric performance of the SnSe family.

Suggested Citation

  • Zhen Wang & Congcong Fan & Zhixuan Shen & Chenqiang Hua & Qifeng Hu & Feng Sheng & Yunhao Lu & Hanyan Fang & Zhizhan Qiu & Jiong Lu & Zhengtai Liu & Wanling Liu & Yaobo Huang & Zhu-An Xu & D. W. Shen , 2018. "Defects controlled hole doping and multivalley transport in SnSe single crystals," Nature Communications, Nature, vol. 9(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-017-02566-1
    DOI: 10.1038/s41467-017-02566-1
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    Cited by:

    1. Li, Zhenzi & Wang, Shijie & Wu, Jiaxing & Zhou, Wei, 2022. "Recent progress in defective TiO2 photocatalysts for energy and environmental applications," Renewable and Sustainable Energy Reviews, Elsevier, vol. 156(C).
    2. Ruofan Du & Yuzhu Wang & Mo Cheng & Peng Wang & Hui Li & Wang Feng & Luying Song & Jianping Shi & Jun He, 2022. "Two-dimensional multiferroic material of metallic p-doped SnSe," Nature Communications, Nature, vol. 13(1), pages 1-9, December.

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