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A two-dimensional Fe-doped SnS2 magnetic semiconductor

Author

Listed:
  • Bo Li

    (University of Chinese Academy of Sciences
    Hunan University)

  • Tao Xing

    (Beihang University)

  • Mianzeng Zhong

    (University of Chinese Academy of Sciences)

  • Le Huang

    (Guangdong University of Technology)

  • Na Lei

    (Beihang University)

  • Jun Zhang

    (University of Chinese Academy of Sciences)

  • Jingbo Li

    (University of Chinese Academy of Sciences)

  • Zhongming Wei

    (University of Chinese Academy of Sciences)

Abstract

Magnetic two-dimensional materials have attracted considerable attention for their significant potential application in spintronics. In this study, we present a high-quality Fe-doped SnS2 monolayer exfoliated using a micromechanical cleavage method. Fe atoms were doped at the Sn atom sites, and the Fe contents are ∼2.1%, 1.5%, and 1.1%. The field-effect transistors based on the Fe0.021Sn0.979S2 monolayer show n-type behavior and exhibit high optoelectronic performance. Magnetic measurements show that pure SnS2 is diamagnetic, whereas Fe0.021Sn0.979S2 exhibits ferromagnetic behavior with a perpendicular anisotropy at 2 K and a Curie temperature of ~31 K. Density functional theory calculations show that long-range ferromagnetic ordering in the Fe-doped SnS2 monolayer is energetically stable, and the estimated Curie temperature agrees well with the results of our experiment. The results suggest that Fe-doped SnS2 has significant potential in future nanoelectronic, magnetic, and optoelectronic applications.

Suggested Citation

  • Bo Li & Tao Xing & Mianzeng Zhong & Le Huang & Na Lei & Jun Zhang & Jingbo Li & Zhongming Wei, 2017. "A two-dimensional Fe-doped SnS2 magnetic semiconductor," Nature Communications, Nature, vol. 8(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_s41467-017-02077-z
    DOI: 10.1038/s41467-017-02077-z
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