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Interlayer excitons in a bulk van der Waals semiconductor

Author

Listed:
  • Ashish Arora

    (University of Münster)

  • Matthias Drüppel

    (University of Münster)

  • Robert Schmidt

    (University of Münster)

  • Thorsten Deilmann

    (University of Münster
    Technical University of Denmark)

  • Robert Schneider

    (University of Münster)

  • Maciej R. Molas

    (CNRS-UGA-UPS-INSA-EMFL)

  • Philipp Marauhn

    (University of Münster)

  • Steffen Michaelis de Vasconcellos

    (University of Münster)

  • Marek Potemski

    (CNRS-UGA-UPS-INSA-EMFL)

  • Michael Rohlfing

    (University of Münster)

  • Rudolf Bratschitsch

    (University of Münster)

Abstract

Bound electron–hole pairs called excitons govern the electronic and optical response of many organic and inorganic semiconductors. Excitons with spatially displaced wave functions of electrons and holes (interlayer excitons) are important for Bose–Einstein condensation, superfluidity, dissipationless current flow, and the light-induced exciton spin Hall effect. Here we report on the discovery of interlayer excitons in a bulk van der Waals semiconductor. They form due to strong localization and spin-valley coupling of charge carriers. By combining high-field magneto-reflectance experiments and ab initio calculations for 2H-MoTe2, we explain their salient features: the positive sign of the g-factor and the large diamagnetic shift. Our investigations solve the long-standing puzzle of positive g-factors in transition metal dichalcogenides, and pave the way for studying collective phenomena in these materials at elevated temperatures.

Suggested Citation

  • Ashish Arora & Matthias Drüppel & Robert Schmidt & Thorsten Deilmann & Robert Schneider & Maciej R. Molas & Philipp Marauhn & Steffen Michaelis de Vasconcellos & Marek Potemski & Michael Rohlfing & Ru, 2017. "Interlayer excitons in a bulk van der Waals semiconductor," Nature Communications, Nature, vol. 8(1), pages 1-6, December.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_s41467-017-00691-5
    DOI: 10.1038/s41467-017-00691-5
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    Cited by:

    1. Simon Raiber & Paulo E. Faria Junior & Dennis Falter & Simon Feldl & Petter Marzena & Kenji Watanabe & Takashi Taniguchi & Jaroslav Fabian & Christian Schüller, 2022. "Ultrafast pseudospin quantum beats in multilayer WSe2 and MoSe2," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    2. Benjamin Carey & Nils Kolja Wessling & Paul Steeger & Robert Schmidt & Steffen Michaelis de Vasconcellos & Rudolf Bratschitsch & Ashish Arora, 2024. "Giant Faraday rotation in atomically thin semiconductors," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    3. Shun Feng & Aidan J. Campbell & Mauro Brotons-Gisbert & Daniel Andres-Penares & Hyeonjun Baek & Takashi Taniguchi & Kenji Watanabe & Bernhard Urbaszek & Iann C. Gerber & Brian D. Gerardot, 2024. "Highly tunable ground and excited state excitonic dipoles in multilayer 2H-MoSe2," Nature Communications, Nature, vol. 15(1), pages 1-10, December.

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