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Coherent manipulation of valley states at multiple charge configurations of a silicon quantum dot device

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  • Joshua S. Schoenfield

    (University of California Los Angeles)

  • Blake M. Freeman

    (University of California Los Angeles)

  • HongWen Jiang

    (University of California Los Angeles)

Abstract

Qubits based on silicon quantum dots are emerging as leading candidates for the solid-state implementation of quantum information processing. In silicon, valley states represent a degree of freedom in addition to spin and charge. Characterizing and controlling valley states is critical for the encoding and read-out of electrons-in-silicon-based qubits. Here, we report the coherent manipulation of a qubit, which is based on the two valley states of an electron confined in a silicon quantum dot. We carry out valley qubit operations at multiple charge configurations of the double quantum dot device. The dependence of coherent oscillations on pulse excitation level and duration allows us to map out the energy dispersion as a function of detuning as well as the phase coherence time of the valley qubit. The coherent manipulation also provides a method of measuring valley splittings that are too small to probe with conventional methods.

Suggested Citation

  • Joshua S. Schoenfield & Blake M. Freeman & HongWen Jiang, 2017. "Coherent manipulation of valley states at multiple charge configurations of a silicon quantum dot device," Nature Communications, Nature, vol. 8(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_s41467-017-00073-x
    DOI: 10.1038/s41467-017-00073-x
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    Cited by:

    1. Thomas McJunkin & Benjamin Harpt & Yi Feng & Merritt P. Losert & Rajib Rahman & J. P. Dodson & M. A. Wolfe & D. E. Savage & M. G. Lagally & S. N. Coppersmith & Mark Friesen & Robert Joynt & M. A. Erik, 2022. "SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits," Nature Communications, Nature, vol. 13(1), pages 1-7, December.

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