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Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode

Author

Listed:
  • Xiankun Zhang

    (State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing)

  • Qingliang Liao

    (State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing)

  • Shuo Liu

    (State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing)

  • Zhuo Kang

    (State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing)

  • Zheng Zhang

    (State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing
    Beijing Municipal Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing)

  • Junli Du

    (State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing)

  • Feng Li

    (State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing)

  • Shuhao Zhang

    (State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing)

  • Jiankun Xiao

    (State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing)

  • Baishan Liu

    (State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing)

  • Yang Ou

    (State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing)

  • Xiaozhi Liu

    (Collaborative Innovation Center of Quantum Matter)

  • Lin Gu

    (Collaborative Innovation Center of Quantum Matter
    Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences)

  • Yue Zhang

    (State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing
    Beijing Municipal Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing)

Abstract

We establish a powerful poly(4-styrenesulfonate) (PSS)-treated strategy for sulfur vacancy healing in monolayer MoS2 to precisely and steadily tune its electronic state. The self-healing mechanism, in which the sulfur vacancies are healed spontaneously by the sulfur adatom clusters on the MoS2 surface through a PSS-induced hydrogenation process, is proposed and demonstrated systematically. The electron concentration of the self-healed MoS2 dramatically decreased by 643 times, leading to a work function enhancement of ∼150 meV. This strategy is employed to fabricate a high performance lateral monolayer MoS2 homojunction which presents a perfect rectifying behaviour, excellent photoresponsivity of ∼308 mA W−1 and outstanding air-stability after two months. Unlike previous chemical doping, the lattice defect-induced local fields are eliminated during the process of the sulfur vacancy self-healing to largely improve the homojunction performance. Our findings demonstrate a promising and facile strategy in 2D material electronic state modulation for the development of next-generation electronics and optoelectronics.

Suggested Citation

  • Xiankun Zhang & Qingliang Liao & Shuo Liu & Zhuo Kang & Zheng Zhang & Junli Du & Feng Li & Shuhao Zhang & Jiankun Xiao & Baishan Liu & Yang Ou & Xiaozhi Liu & Lin Gu & Yue Zhang, 2017. "Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode," Nature Communications, Nature, vol. 8(1), pages 1-8, August.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms15881
    DOI: 10.1038/ncomms15881
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