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Bending strain engineering in quantum spin hall system for controlling spin currents

Author

Listed:
  • Bing Huang

    (Beijing Computational Science Research Center)

  • Kyung-Hwan Jin

    (University of Utah)

  • Bin Cui

    (University of Utah)

  • Feng Zhai

    (Zhejiang Normal University)

  • Jiawei Mei

    (Beijing Computational Science Research Center
    University of Utah)

  • Feng Liu

    (University of Utah
    Collaborative Innovation Center of Quantum Matter)

Abstract

Quantum spin Hall system can exhibit exotic spin transport phenomena, mediated by its topological edge states. Here the concept of bending strain engineering to tune the spin transport properties of a quantum spin Hall system is demonstrated. We show that bending strain can be used to control the spin orientation of counter-propagating edge states of a quantum spin system to generate a non-zero spin current. This physics mechanism can be applied to effectively tune the spin current and pure spin current decoupled from charge current in a quantum spin Hall system by control of its bending curvature. Furthermore, the curved quantum spin Hall system can be achieved by the concept of topological nanomechanical architecture in a controllable way, as demonstrated by the material example of Bi/Cl/Si(111) nanofilm. This concept of bending strain engineering of spins via topological nanomechanical architecture affords a promising route towards the realization of topological nano-mechanospintronics.

Suggested Citation

  • Bing Huang & Kyung-Hwan Jin & Bin Cui & Feng Zhai & Jiawei Mei & Feng Liu, 2017. "Bending strain engineering in quantum spin hall system for controlling spin currents," Nature Communications, Nature, vol. 8(1), pages 1-8, August.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms15850
    DOI: 10.1038/ncomms15850
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