Author
Listed:
- Shinji Miwa
(Graduate School of Engineering Science, Osaka University
Center for Spintronics Research Network (CSRN), Osaka University)
- Motohiro Suzuki
(Japan Synchrotron Radiation Research Institute (JASRI))
- Masahito Tsujikawa
(Research Institute of Electrical Communication, Tohoku University
Center for Spintronics Research Network (CSRN), Tohoku University)
- Kensho Matsuda
(Graduate School of Engineering Science, Osaka University)
- Takayuki Nozaki
(National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center)
- Kazuhito Tanaka
(Graduate School of Engineering Science, Osaka University)
- Takuya Tsukahara
(Graduate School of Engineering Science, Osaka University)
- Kohei Nawaoka
(Graduate School of Engineering Science, Osaka University)
- Minori Goto
(Graduate School of Engineering Science, Osaka University
Center for Spintronics Research Network (CSRN), Osaka University)
- Yoshinori Kotani
(Japan Synchrotron Radiation Research Institute (JASRI))
- Tadakatsu Ohkubo
(Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS))
- Frédéric Bonell
(Graduate School of Engineering Science, Osaka University)
- Eiiti Tamura
(Graduate School of Engineering Science, Osaka University)
- Kazuhiro Hono
(Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS))
- Tetsuya Nakamura
(Japan Synchrotron Radiation Research Institute (JASRI))
- Masafumi Shirai
(Research Institute of Electrical Communication, Tohoku University
Center for Spintronics Research Network (CSRN), Tohoku University)
- Shinji Yuasa
(National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center)
- Yoshishige Suzuki
(Graduate School of Engineering Science, Osaka University
Center for Spintronics Research Network (CSRN), Osaka University
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center
Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS))
Abstract
Electric fields at interfaces exhibit useful phenomena, such as switching functions in transistors, through electron accumulations and/or electric dipole inductions. We find one potentially unique situation in a metal–dielectric interface in which the electric field is atomically inhomogeneous because of the strong electrostatic screening effect in metals. Such electric fields enable us to access electric quadrupoles of the electron shell. Here we show, by synchrotron X-ray absorption spectroscopy, electric field induction of magnetic dipole moments in a platinum monatomic layer placed on ferromagnetic iron. Our theoretical analysis indicates that electric quadrupole induction produces magnetic dipole moments and provides a large magnetic anisotropy change. In contrast with the inability of current designs to offer ultrahigh-density memory devices using electric-field-induced spin control, our findings enable a material design showing more than ten times larger anisotropy energy change for such a use and highlight a path in electric-field control of condensed matter.
Suggested Citation
Shinji Miwa & Motohiro Suzuki & Masahito Tsujikawa & Kensho Matsuda & Takayuki Nozaki & Kazuhito Tanaka & Takuya Tsukahara & Kohei Nawaoka & Minori Goto & Yoshinori Kotani & Tadakatsu Ohkubo & Frédéri, 2017.
"Voltage controlled interfacial magnetism through platinum orbits,"
Nature Communications, Nature, vol. 8(1), pages 1-9, August.
Handle:
RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms15848
DOI: 10.1038/ncomms15848
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