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Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

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  • Tae-Eon Park

    (Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology)

  • Youn Ho Park

    (Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology
    Yonsei University)

  • Jong-Min Lee

    (Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology)

  • Sung Wook Kim

    (Yonsei University)

  • Hee Gyum Park

    (Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology
    Korea University of Science and Technology)

  • Byoung-Chul Min

    (Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology
    Korea University of Science and Technology)

  • Hyung-jun Kim

    (Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology)

  • Hyun Cheol Koo

    (Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology
    KU-KIST Graduate School of Converging Science and Technology, Korea University)

  • Heon-Jin Choi

    (Yonsei University)

  • Suk Hee Han

    (Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology)

  • Mark Johnson

    (Naval Research Laboratory)

  • Joonyeon Chang

    (Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology
    Korea University of Science and Technology)

Abstract

Semiconductor spintronics is an alternative to conventional electronics that offers devices with high performance, low power and multiple functionality. Although a large number of devices with mesoscopic dimensions have been successfully demonstrated at low temperatures for decades, room-temperature operation still needs to go further. Here we study spin injection in single-crystal gallium nitride nanowires and report robust spin accumulation at room temperature with enhanced spin injection polarization of 9%. A large Overhauser coupling between the electron spin accumulation and the lattice nuclei is observed. Finally, our single-crystal gallium nitride samples have a trigonal cross-section defined by the (001), ( ) and ( ) planes. Using the Hanle effect, we show that the spin accumulation is significantly different for injection across the (001) and ( ) (or ( )) planes. This provides a technique for increasing room temperature spin injection in mesoscopic systems.

Suggested Citation

  • Tae-Eon Park & Youn Ho Park & Jong-Min Lee & Sung Wook Kim & Hee Gyum Park & Byoung-Chul Min & Hyung-jun Kim & Hyun Cheol Koo & Heon-Jin Choi & Suk Hee Han & Mark Johnson & Joonyeon Chang, 2017. "Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires," Nature Communications, Nature, vol. 8(1), pages 1-7, August.
  • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms15722
    DOI: 10.1038/ncomms15722
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