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Electrical resistance of individual defects at a topological insulator surface

Author

Listed:
  • Felix Lüpke

    (Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich
    JARA-FIT, Forschungszentrum Jülich)

  • Markus Eschbach

    (JARA-FIT, Forschungszentrum Jülich
    Peter Grünberg Institut (PGI-6), Forschungszentrum Jülich)

  • Tristan Heider

    (JARA-FIT, Forschungszentrum Jülich
    Peter Grünberg Institut (PGI-6), Forschungszentrum Jülich)

  • Martin Lanius

    (JARA-FIT, Forschungszentrum Jülich
    Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich)

  • Peter Schüffelgen

    (JARA-FIT, Forschungszentrum Jülich
    Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich)

  • Daniel Rosenbach

    (JARA-FIT, Forschungszentrum Jülich
    Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich)

  • Nils von den Driesch

    (JARA-FIT, Forschungszentrum Jülich
    Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich)

  • Vasily Cherepanov

    (Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich
    JARA-FIT, Forschungszentrum Jülich)

  • Gregor Mussler

    (JARA-FIT, Forschungszentrum Jülich
    Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich)

  • Lukasz Plucinski

    (JARA-FIT, Forschungszentrum Jülich
    Peter Grünberg Institut (PGI-6), Forschungszentrum Jülich)

  • Detlev Grützmacher

    (JARA-FIT, Forschungszentrum Jülich
    Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich)

  • Claus M. Schneider

    (JARA-FIT, Forschungszentrum Jülich
    Peter Grünberg Institut (PGI-6), Forschungszentrum Jülich)

  • Bert Voigtländer

    (Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich
    JARA-FIT, Forschungszentrum Jülich)

Abstract

Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defects at the surface of a (Bi0.53Sb0.47)2Te3 topological insulator thin film. We find the largest localized voltage drop to be located at domain boundaries in the topological insulator film, with a resistivity about four times higher than that of a step edge. Furthermore, we resolve resistivity dipoles located around nanoscale voids in the sample surface. The influence of such defects on the resistance of the topological surface state is analysed by means of a resistor network model. The effect resulting from the voids is found to be small compared with the other defects.

Suggested Citation

  • Felix Lüpke & Markus Eschbach & Tristan Heider & Martin Lanius & Peter Schüffelgen & Daniel Rosenbach & Nils von den Driesch & Vasily Cherepanov & Gregor Mussler & Lukasz Plucinski & Detlev Grützmache, 2017. "Electrical resistance of individual defects at a topological insulator surface," Nature Communications, Nature, vol. 8(1), pages 1-7, August.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms15704
    DOI: 10.1038/ncomms15704
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