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Coherent control of the silicon-vacancy spin in diamond

Author

Listed:
  • Benjamin Pingault

    (Cavendish Laboratory, University of Cambridge)

  • David-Dominik Jarausch

    (Cavendish Laboratory, University of Cambridge)

  • Christian Hepp

    (Cavendish Laboratory, University of Cambridge)

  • Lina Klintberg

    (Cavendish Laboratory, University of Cambridge)

  • Jonas N. Becker

    (Fachrichtung 7.2 (Experimentalphysik), Universität des Saarlandes)

  • Matthew Markham

    (Element Six Ltd., Global Innovation Centre)

  • Christoph Becher

    (Fachrichtung 7.2 (Experimentalphysik), Universität des Saarlandes)

  • Mete Atatüre

    (Cavendish Laboratory, University of Cambridge)

Abstract

Spin impurities in diamond have emerged as a promising building block in a wide range of solid-state-based quantum technologies. The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties with a ground-state electronic spin, which can be read out optically. However, for this spin to be operational as a quantum bit, full quantum control is essential. Here we report the measurement of optically detected magnetic resonance and the demonstration of coherent control of a single silicon-vacancy centre spin with a microwave field. Using Ramsey interferometry, we directly measure a spin coherence time, T2*, of 115±9 ns at 3.6 K. The temperature dependence of coherence times indicates that dephasing and decay of the spin arise from single-phonon-mediated excitation between orbital branches of the ground state. Our results enable the silicon-vacancy centre spin to become a controllable resource to establish spin-photon quantum interfaces.

Suggested Citation

  • Benjamin Pingault & David-Dominik Jarausch & Christian Hepp & Lina Klintberg & Jonas N. Becker & Matthew Markham & Christoph Becher & Mete Atatüre, 2017. "Coherent control of the silicon-vacancy spin in diamond," Nature Communications, Nature, vol. 8(1), pages 1-7, August.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms15579
    DOI: 10.1038/ncomms15579
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