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Super-diffusion of excited carriers in semiconductors

Author

Listed:
  • Ebrahim Najafi

    (Physical Biology Center for Ultrafast Science and Technology, Arthur Noyes Laboratory of Chemical Physics, California Institute of Technology)

  • Vsevolod Ivanov

    (Steele Laboratory, California Institute of Technology
    California Institute of Technology)

  • Ahmed Zewail

    (Physical Biology Center for Ultrafast Science and Technology, Arthur Noyes Laboratory of Chemical Physics, California Institute of Technology)

  • Marco Bernardi

    (Steele Laboratory, California Institute of Technology)

Abstract

The ultrafast spatial and temporal dynamics of excited carriers are important to understanding the response of materials to laser pulses. Here we use scanning ultrafast electron microscopy to image the dynamics of electrons and holes in silicon after excitation with a short laser pulse. We find that the carriers exhibit a diffusive dynamics at times shorter than 200 ps, with a transient diffusivity up to 1,000 times higher than the room temperature value, D0≈30 cm2s−1. The diffusivity then decreases rapidly, reaching a value of D0 roughly 500 ps after the excitation pulse. We attribute the transient super-diffusive behaviour to the rapid expansion of the excited carrier gas, which equilibrates with the environment in 100−150 ps. Numerical solution of the diffusion equation, as well as ab initio calculations, support our interpretation. Our findings provide new insight into the ultrafast spatial dynamics of excited carriers in materials.

Suggested Citation

  • Ebrahim Najafi & Vsevolod Ivanov & Ahmed Zewail & Marco Bernardi, 2017. "Super-diffusion of excited carriers in semiconductors," Nature Communications, Nature, vol. 8(1), pages 1-7, August.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms15177
    DOI: 10.1038/ncomms15177
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    Cited by:

    1. Huanyi Xue & Ruijie Qian & Weikang Lu & Xue Gong & Ludi Qin & Zhenyang Zhong & Zhenghua An & Lidong Chen & Wei Lu, 2023. "Direct observation of hot-electron-enhanced thermoelectric effects in silicon nanodevices," Nature Communications, Nature, vol. 14(1), pages 1-9, December.

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