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Fabrication of MoSe2 nanoribbons via an unusual morphological phase transition

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  • Yuxuan Chen

    (University of Texas at Austin)

  • Ping Cui

    (International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China)

  • Xibiao Ren

    (State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University)

  • Chendong Zhang

    (University of Texas at Austin
    International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China)

  • Chuanhong Jin

    (State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University)

  • Zhenyu Zhang

    (International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China)

  • Chih-Kang Shih

    (University of Texas at Austin)

Abstract

Transition metal dichalcogenides (TMDs) are a family of van der Waals layered materials exhibiting unique electronic, optical, magnetic and transport properties. Their technological potentials hinge critically on the ability to achieve controlled fabrication of desirable nanostructures, such as nanoribbons and nanodots. To date, nanodots/nanoislands have been regularly observed, while controlled fabrication of TMD nanoribbons remains challenging. Here we report a bottom-up fabrication of MoSe2 nanoribbons using molecular beam epitaxy, via an unexpected temperature-induced morphological phase transition from the nanodot to nanoribbon regime. Such nanoribbons are of zigzag nature, characterized by distinct chemical and electronic properties along the edges. The phase space for nanoribbon growth is narrowly defined by proper Se:Mo ratios, as corroborated experimentally using different Se fluxes, and supported theoretically using first-principles calculations that establish the crucial role of the morphological reconstruction of the bare Mo-terminated edge. The growth mechanism revealed should be applicable to other TMD systems.

Suggested Citation

  • Yuxuan Chen & Ping Cui & Xibiao Ren & Chendong Zhang & Chuanhong Jin & Zhenyu Zhang & Chih-Kang Shih, 2017. "Fabrication of MoSe2 nanoribbons via an unusual morphological phase transition," Nature Communications, Nature, vol. 8(1), pages 1-9, August.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms15135
    DOI: 10.1038/ncomms15135
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    Cited by:

    1. Pengfei Yang & Dashuai Wang & Xiaoxu Zhao & Wenzhi Quan & Qi Jiang & Xuan Li & Bin Tang & Jingyi Hu & Lijie Zhu & Shuangyuan Pan & Yuping Shi & Yahuan Huan & Fangfang Cui & Shan Qiao & Qing Chen & Zhe, 2022. "Epitaxial growth of inch-scale single-crystal transition metal dichalcogenides through the patching of unidirectionally orientated ribbons," Nature Communications, Nature, vol. 13(1), pages 1-9, December.

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