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Electrical spin injection and detection in molybdenum disulfide multilayer channel

Author

Listed:
  • Shiheng Liang

    (Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine)

  • Huaiwen Yang

    (Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine)

  • Pierre Renucci

    (Université de Toulouse, INSA-CNRS-UPS, LPCNO)

  • Bingshan Tao

    (Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine)

  • Piotr Laczkowski

    (Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay)

  • Stefan Mc-Murtry

    (Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine)

  • Gang Wang

    (Université de Toulouse, INSA-CNRS-UPS, LPCNO)

  • Xavier Marie

    (Université de Toulouse, INSA-CNRS-UPS, LPCNO)

  • Jean-Marie George

    (Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay)

  • Sébastien Petit-Watelot

    (Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine)

  • Abdelhak Djeffal

    (Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine)

  • Stéphane Mangin

    (Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine)

  • Henri Jaffrès

    (Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay)

  • Yuan Lu

    (Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine)

Abstract

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, the demonstration of an electron spin transport through a semiconducting MoS2 channel remains challenging. Here we show the evidence of the electrical spin injection and detection in the conduction band of a multilayer MoS2 semiconducting channel using a two-terminal spin-valve configuration geometry. A magnetoresistance around 1% has been observed through a 450 nm long, 6 monolayer thick MoS2 channel with a Co/MgO tunnelling spin injector and detector. It is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresistance. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel with an in-plane spin polarization. The long spin diffusion length (approximately ∼235 nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.

Suggested Citation

  • Shiheng Liang & Huaiwen Yang & Pierre Renucci & Bingshan Tao & Piotr Laczkowski & Stefan Mc-Murtry & Gang Wang & Xavier Marie & Jean-Marie George & Sébastien Petit-Watelot & Abdelhak Djeffal & Stéphan, 2017. "Electrical spin injection and detection in molybdenum disulfide multilayer channel," Nature Communications, Nature, vol. 8(1), pages 1-9, April.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms14947
    DOI: 10.1038/ncomms14947
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    Cited by:

    1. Wibson W. G. Silva & José Holanda, 2023. "One analytical approach of Rashba–Edelstein magnetoresistance in 2D materials," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 96(4), pages 1-7, April.

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