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Tailoring the thermal and electrical transport properties of graphene films by grain size engineering

Author

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  • Teng Ma

    (Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences)

  • Zhibo Liu

    (Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences)

  • Jinxiu Wen

    (State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University)

  • Yang Gao

    (Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences)

  • Xibiao Ren

    (State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University)

  • Huanjun Chen

    (State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University)

  • Chuanhong Jin

    (State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University)

  • Xiu-Liang Ma

    (Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences)

  • Ningsheng Xu

    (State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University)

  • Hui-Ming Cheng

    (Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences)

  • Wencai Ren

    (Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences)

Abstract

Understanding the influence of grain boundaries (GBs) on the electrical and thermal transport properties of graphene films is essentially important for electronic, optoelectronic and thermoelectric applications. Here we report a segregation–adsorption chemical vapour deposition method to grow well-stitched high-quality monolayer graphene films with a tunable uniform grain size from ∼200 nm to ∼1 μm, by using a Pt substrate with medium carbon solubility, which enables the determination of the scaling laws of thermal and electrical conductivities as a function of grain size. We found that the thermal conductivity of graphene films dramatically decreases with decreasing grain size by a small thermal boundary conductance of ∼3.8 × 109 W m−2 K−1, while the electrical conductivity slowly decreases with an extraordinarily small GB transport gap of ∼0.01 eV and resistivity of ∼0.3 kΩ μm. Moreover, the changes in both the thermal and electrical conductivities with grain size change are greater than those of typical semiconducting thermoelectric materials.

Suggested Citation

  • Teng Ma & Zhibo Liu & Jinxiu Wen & Yang Gao & Xibiao Ren & Huanjun Chen & Chuanhong Jin & Xiu-Liang Ma & Ningsheng Xu & Hui-Ming Cheng & Wencai Ren, 2017. "Tailoring the thermal and electrical transport properties of graphene films by grain size engineering," Nature Communications, Nature, vol. 8(1), pages 1-9, April.
  • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms14486
    DOI: 10.1038/ncomms14486
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    Cited by:

    1. Zhao Wang & Wenlin Liu & Jiaxin Shao & He Hao & Guorui Wang & Yixuan Zhao & Yeshu Zhu & Kaicheng Jia & Qi Lu & Jiawei Yang & Yanfeng Zhang & Lianming Tong & Yuqing Song & Pengzhan Sun & Boyang Mao & C, 2024. "Cyclododecane-based high-intactness and clean transfer method for fabricating suspended two-dimensional materials," Nature Communications, Nature, vol. 15(1), pages 1-9, December.

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